DiodesZetex Isolated 2 Type P-Channel Power MOSFET 4.8 A 60 V Enhancement 8-Pin SOIC ZXMP6A18DN8TA

DiodesZetex ZXMP6A18DN8TA is an isolated dual P-Channel power MOSFET designed for efficient switching and power management applications. It supports a maximum continuous drain current of 4.8 A and can withstand up to 60 V drain-source voltage, making it suitable for industrial, automotive, and consumer electronic systems.

The device comes in a compact 8-pin SOIC surface mount package with dimensions: height 1.5mm, length 5mm, and width 4mm, ideal for high-density PCB assemblies. It features an enhancement channel mode transistor configuration, ensuring low on-resistance (80mΩ max) and reduced conduction losses.

Operating over a wide temperature range from -55°C to +150°C, this MOSFET meets rigorous standards including RoHS compliance, UL 94V-0 flame retardancy, MIL-STD-202, AEC-Q101 for automotive reliability, and J-STD-020 qualification. Its typical gate charge of 44nC at Vgs enables fast switching and efficient gate control.

This product contains two isolated P-Channel transistors per chip, making it versatile for dual-channel power designs in industrial electronics, automotive electronic control units (ECUs), power supplies, and other power switching contexts.

Its isolated transistor construction reduces interference and enhances reliability in demanding environments. Forward voltage of -0.85V and gate-source voltage rating of -20 to +20V ensure robust electrical characteristics.

With a maximum power dissipation of 2.1W, it supports reliable operation with adequate thermal management. The device aids engineers in developing power-efficient, compact, and durable semiconductor solutions.

Explore EnvMart’s comprehensive range of DiodesZetex power MOSFETs and related discrete semiconductors for your next electronic design and prototyping requirements. Features a surface mount 8-pin SOIC package for compact PCB integration.

Operates with an enhancement channel mode for efficient power handling. Maximum continuous drain current of 4.8 amperes ensures reliable performance. Maximum drain-source voltage rated at 60 volts for robust electrical tolerance.

Low maximum drain-source resistance of 80 milliohms minimizes power losses. Supports a wide operating temperature range from -55°C to +150°C for harsh environments. Typical gate charge of 44 nanocoulombs at gate-source voltage enables fast switching.

Complies with automotive AEC-Q101 standards and multiple robust certifications including RoHS and MIL-STD-202. Height, length, and width dimensions are 1.5mm, 5mm, and 4mm respectively for precise PCB layout. Contains 2 isolated transistor elements per chip enhancing device versatility.

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