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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.9mm |
| Model | BSS138LT3G |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | BSS138L |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
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| RS Stock No. | 690-0136Brand: onsemiManufacturers Part No.: BSS138LT3G |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 200mA |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 3.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 225mW |
| Typical Gate Charge Qg @ Vgs | 160nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
The onsemi BSS138LT3G is an N-Channel Power MOSFET designed for applications requiring low current switching and amplification. Encapsulated in a 3-pin SOT-23 surface mount package, it supports a maximum continuous drain current of 200mA and a maximum drain-source voltage rating of 50V.
This enhancement mode MOSFET is optimized for reliable operation within a temperature range of -55°C to 150°C. Its low maximum drain-source resistance of 3.5Ω minimizes power loss and improves efficiency in electronic circuits. The device features a typical gate charge of 160nC at Vgs, enabling fast switching suitable for power management and signal processing tasks.
The compact dimensions of 2.9mm length, 1.3mm width, and 940μm height make it ideal for space-constrained PCB layouts in various industrial and consumer electronics applications. This MOSFET is widely used in power supply modules, signal switching devices, and low power amplification circuits across industrial, laboratory, and commercial electronics platforms.
The package complies with surface mount technology standards, making the BSS138LT3G a versatile and reliable choice for modern electronic component assemblies. Maximum continuous drain current: 200mA. Maximum drain-source voltage: 50V.
Enhancement mode channel type. 3-pin SOT-23 surface mount package. Maximum power dissipation: 225mW. Typical gate charge: 160nC at Vgs. Operating temperature range: -55°C to 150°C. Maximum Rds(on): 3.5Ω. Height: 940μm, length: 2.9mm, width: 1.3mm.
This onsemi MOSFET is suitable for use in electronics manufacturing, prototyping, industrial automation, and embedded systems. Explore the Electronics & Electricals category and discover more Power MOSFETs and semiconductor components available at EnvMart.
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