Infineon HEXFETPower N-Channel Power MOSFET 353 A 24 V Enhancement 3-Pin TO-220AB IRF1324PBF

Infineon's IRF1324PBF is a HEXFETPower N-Channel Power MOSFET offering exceptional electrical performance with a maximum continuous drain current of 353 A and a drain-source voltage of 24 V. It is designed to deliver efficient power switching in demanding industrial and electronic applications.

Housed in a durable 3-pin TO-220AB through-hole package, this enhancement mode MOSFET features low on-resistance of 1.5 milliohms, minimizing conduction losses and improving system efficiency. The device is rated for a maximum power dissipation of 300 W, enabling operation under high power conditions.

Thermally robust, the IRF1324PBF operates reliably in environments ranging from -55°C up to 175°C, meeting the needs of industrial, manufacturing, and power management use cases. With a typical gate charge of 160 nC at rated gate voltage and gate source voltage tolerance from -20 V to +20 V, it supports fast switching and precise control in power circuits.

The compact form factor, measuring approximately 10.67 mm length, 9.02 mm height, and 4.83 mm width, allows for flexible PCB layouts and efficient thermal management. Though it does not carry automotive-specific certifications, it is well suited for laboratory, industrial manufacturing, HVAC, and varied power electronics implementations.

The Infineon IRF1324PBF MOSFET is part of a family designed to optimize conduction losses and system efficiency through advanced semiconductor technology. Its robust electrical characteristics make it a reliable choice for electronic components, power converters, and discrete semiconductor applications.

Features three pins accommodated in TO-220AB package for through-hole mounting. Enhanced channel mode optimized for power applications. Maximum power dissipation rated at 300 W for reliable operation. Operates within temperature range of -55°C to 175°C ensuring durability.

Maximum drain-source resistance of 1.5 milliohms reducing conduction losses. Typical gate charge of 160 nC at rated gate voltage for efficient switching. Gate source voltage tolerance from -20 V to +20 V for robust control.

Compact dimensions measuring 10.67 mm length, 9.02 mm height, and 4.83 mm width. Designed without automotive-specific standard certifications. Ideal for industrial power management, motor drives, and electronic switching applications.

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