Infineon HEXFET N-Channel Power MOSFET 51 A, 55 V Enhancement Mode, TO-220AB Package IRLZ44ZPBF

Infineon IRLZ44ZPBF HEXFET N-Channel Power MOSFET in a TO-220AB package delivers a maximum continuous drain current of 51 A and a maximum drain-source voltage of 55 V. This enhancement mode device is designed for high-efficiency power switching and robust thermal management with an 80 W maximum power dissipation capability.

Featuring a low on-resistance of 13.5 milliohm, the MOSFET minimizes conduction losses for optimized system efficiency in industrial and automotive applications. The device accommodates through-hole mounting with its 3-pin TO-220AB form factor, measuring 10.67 mm in length, 9.65 mm in width, and 8.77 mm in height.

The typical gate charge of 24 nC at Vgs aids in rapid switching, improving power conversion efficiency. Operation is supported over a wide temperature range, from -55°C to 175°C, ensuring durability in demanding environments including automotive and industrial power management systems. The IRLZ44ZPBF complies with RoHS and automotive standard AEC-Q101 for quality and reliability assurance.

Infineon's HEXFET technology provides designers with Power MOSFETs optimized for low losses and high power density, suitable for switching regulators, motor drivers, and load switch applications.

This MOSFET is ideal for use in industrial power supplies, automotive electronics, and general power management circuits. Efficient thermal performance and rugged design provide extended operating life and reliability in harsh conditions.

The package and pin configuration facilitate easy integration on through-hole PCBs. Lead-free and RoHS-compliant construction supports environmental sustainability mandates. Explore additional MOSFET and semiconductor products in the Electronics & Electricals category on EnvMart for a wide selection of power management solutions.