Infineon HEXFET N-Channel MOSFET, 83 A, 150 V Enhancement Mode, 3-Pin TO-220 IRFB4228PBF

Infineon IRFB4228PBF HEXFET N-Channel MOSFET is a high-performance power transistor designed to handle 83 A continuous drain current and withstand voltages up to 150 V. Packaged in a 3-pin TO-220 form factor with through-hole mounting, this device is engineered for superior efficiency in power conversion and management applications. Its enhancement mode channel type N configuration allows for excellent switching speed and thermal performance.

Featuring a maximum power dissipation of 330 W, the IRFB4228PBF ensures reliable operation even under heavy loads. The low maximum drain-source resistance of 15 milliohms reduces conduction losses, contributing to overall system efficiency. Typical gate charge of 72 nanocoulombs at specified gate voltages allows for rapid switching, essential in high-frequency applications.

The device supports a wide gate-source voltage range from -30 V to +30 V, providing robust gate control and protection against voltage spikes. It operates reliably in harsh environments with an operating temperature range spanning from -40°C to 175°C.

The component's compact dimensions - height 8.77 mm, width 4.82 mm, and length 1.3 mm - make it suitable for compact electronic designs. The TO-220 package with a through-hole mount type ensures straightforward installation and is compatible with various cooling solutions.

The IRFB4228PBF HEXFET MOSFET is ideally suited for industrial, automotive, and commercial applications requiring efficient power switching such as motor control drivers, power supplies, and renewable energy systems. Its robust characteristics make it an excellent choice for designers seeking high reliability and performance.

This MOSFET operates in enhancement mode with a channel type N. Maximum power dissipation is rated at 330 W for high efficiency. Maximum drain-source resistance is 15 milliohms, enabling low conduction losses. Typical gate charge at Vgs is 72 nanocoulombs for fast switching performance.

Maximum gate-source voltage ranges from -30 V to +30 V for robust gate control. Operating temperature ranges from -40°C to 175°C, suitable for demanding applications. Dimensions are compact with a height of 8.77 mm, width of 4.82 mm, and length of 1.3 mm.

The package type is TO-220 with through-hole mount capability for easy PCB assembly. It is ideal for power conversion, motor drive, and power management circuits. Explore more electronic components and power semiconductors at EnvMart to find optimal solutions for your projects and industrial needs.

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