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Infineon HEXFET N-Channel MOSFET 44 A 250 V Enhancement 3-Pin TO-247 IRFP4229PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP4229PBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 688-6998Brand: InfineonManufacturers Part No.: IRFP4229PBF |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 44A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 46mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 310W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.3V |
Key Features
- Designed for through-hole mount with TO-247 package type.
- Features low Rds(on) of 46 milliohms for efficient switching.
- Supports maximum power dissipation of 310 W with high thermal limit.
- Operates in enhancement mode with 3 pins suitable for various applications.
- Can withstand operating temperatures from -40°C up to 175°C.
- Typical gate charge of 72 nC at Vgs ensures precise control.
- Offers ±30 V maximum gate-source voltage tolerance.
Product Description
Infineon IRFP4229PBF HEXFET N-Channel MOSFET is a robust discrete semiconductor device designed for efficient motor control and synchronous rectification applications. It features a maximum continuous drain current of 44 A and a maximum drain-source voltage of 250 V, making it suitable for high-power circuits operating in demanding industrial and commercial environments.
Packaged in the TO-247 form factor for through-hole mounting, the device ensures easy integration in power electronics systems. The HEXFET series provides low on-resistance of 46 milliohms to optimize conduction losses and enhance overall efficiency. The enhancement channel mode and 3-pin configuration offer straightforward switching control in AC-DC power converters and motor drive circuits.
Operating reliably over a broad temperature range from -40°C to 175°C, it provides high power dissipation capability rated at 310 W, supporting high-performance applications that demand thermal endurance. The typical gate charge of 72 nanocoulombs at Vgs guarantees responsive switching, and the gate-source voltage tolerance of ±30 V protects against voltage transients.
Dimensionally compact at 20.3 mm height, 15.9 mm length, and 5.3 mm width, this MOSFET is a proven solution in power management, industrial automation, and energy-efficient systems. It belongs to Infineon's extensive portfolio of MOSFETs designed to deliver superior efficiency, power density, and cost-effectiveness without compromising reliability.
Designed for through-hole mount with TO-247 package type. Features low Rds(on) of 46 milliohms for efficient switching. Supports maximum power dissipation of 310 W with high thermal limit. Operates in enhancement mode with 3 pins suitable for various applications.
Can withstand operating temperatures from -40°C up to 175°C. Typical gate charge of 72 nC at Vgs ensures precise control. Offers ±30 V maximum gate-source voltage tolerance. Compact package dimensions for space-efficient integration.
This MOSFET is ideal for industrial, laboratory, manufacturing, automotive, and HVAC sectors requiring high efficiency and robust power control. Explore the full range of Infineon semiconductor components on EnvMart for reliable and cutting-edge electronic solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 44 A.
It can handle a maximum drain-source voltage of 250 V.
This model supports a maximum power dissipation of 310 W.
The dimensions of the TO-247 package are 20.3 mm in height, 15.9 mm in length, and 5.3 mm in width.
It features a low on-resistance of 46 milliohms.
The typical gate charge at Vgs is 72 nanocoulombs (nC).
It can operate within a temperature range of -40°C to 175°C.
The maximum gate-source voltage tolerance is ±30 V.
This model is designed for through-hole mounting.
It features an N-channel configuration.
This MOSFET is suitable for motor control and synchronous rectification applications.
It belongs to the HEXFET series.
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