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Infineon HEXFET N-Channel MOSFET 80 A 75 V Enhancement 3-Pin IPAK IRFU3607PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRFU3607PBF |
| Width | 2.39mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 688-7134Brand: InfineonManufacturers Part No.: IRFU3607PBFDistrelec Article No.: 304-43-455 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Features an enhancement channel mode for reliable switching performance.
- Comes in a 3-pin IPAK through hole mount package.
- Maximum power dissipation rating of 140 W allows for robust thermal handling.
- Low on-resistance of 9 milliohms reduces conduction losses during operation.
- Operating temperature range from -55°C to 175°C supports demanding environments.
- Maximum gate-source voltage is ±20 V ensuring safe operation across various circuits.
- Forward voltage drop is approximately 1.3 V enhancing efficiency.
- Compact dimensions with 6.73 mm length, 2.39 mm width, and 6.22 mm height.
Product Description
Infineon IRFU3607PBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor designed to deliver efficient power switching in industrial and electronic applications. This device supports a maximum continuous drain current of 80 A and a drain-source voltage rating of 75 V, making it suitable for demanding power management systems.
It features an enhancement channel mode and a low maximum drain-source resistance of 9 milliohms, which significantly reduces conduction losses to improve system efficiency. The MOSFET is housed in a 3-pin IPAK package for through-hole mounting, offering robust mechanical and thermal characteristics with a maximum power dissipation of 140 W.
The device operates reliably across a broad temperature range from -55°C to 175°C, allowing deployment in harsh industrial or automotive environments where thermal stability is critical. The gate-source voltage rating of ±20 V delivers compatibility with a variety of gate drive circuits, while a forward voltage of 1.3 V supports efficient switching performance.
Compact dimensions (length 6.73 mm, width 2.39 mm, height 6.22 mm) enable flexible board layouts. This MOSFET is suitable for use in power conversion, motor drives, power supplies, and other electronic control systems requiring robust switching components.
Features an enhancement channel mode for reliable switching performance. Comes in a 3-pin IPAK through hole mount package. Maximum power dissipation rating of 140 W allows for robust thermal handling. Low on-resistance of 9 milliohms reduces conduction losses during operation.
Operating temperature range from -55°C to 175°C supports demanding environments. Maximum gate-source voltage is ±20 V ensuring safe operation across various circuits. Forward voltage drop is approximately 1.3 V enhancing efficiency.
Compact dimensions with 6.73 mm length, 2.39 mm width, and 6.22 mm height. Designed for through-hole mounting on electronic boards. Ideal for industrial, electronic component, and power management applications.
Choose Infineon power semiconductors for trusted performance in industrial, manufacturing, and electronic engineering projects. Explore our comprehensive range of MOSFETs and related components to meet your design requirements.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 A.
It has a maximum drain-source voltage rating of 75 V.
The maximum power dissipation rating is 140 W.
The MOSFET features a low maximum drain-source resistance of 9 milliohms.
It operates within a temperature range of -55°C to 175°C.
This model comes in a 3-pin IPAK through-hole mount package.
The maximum gate-source voltage is ±20 V.
The forward voltage drop is approximately 1.3 V.
The dimensions are 6.73 mm in length, 2.39 mm in width, and 6.22 mm in height.
It uses an enhancement channel mode for reliable switching performance.
This MOSFET is suitable for power conversion, motor drives, power supplies, and other electronic control systems.
The typical gate charge at Vgs is 56 nC.
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