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STMicroelectronics MDmesh M5 N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-220 STP16N65M5

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STMicroelectronics MDmesh M5 N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-220 STP16N65M5

Name: STMicroelectronics MDmesh M5 N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-220 STP16N65M5
Brand: STMicroelectronics
SKU: 350380
Price: 3.95 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	9.15mm
Length	10.4mm
Model	STP16N65M5
Width	4.6mm
Mount Type	Through Hole
Series	MDmesh M5
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	12A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	299mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	90W
Typical Gate Charge Qg @ Vgs	31nC
Maximum Gate Source Voltage Vgs	25V
Forward Voltage Vf	1.5V

Key Features

This MOSFET belongs to the MDmesh M5 series, optimized for high power PFC and PWM topologies.
It features a low on-state resistance of 299 mOhm and a maximum power dissipation of 90 W.
The device supports a maximum continuous drain current of 12 A and can operate up to 150 °C.
Designed with low gate charge of 31 nC improving switching efficiency.
The MOSFET is mounted through hole with a compact TO-220 package.
Typical forward voltage is 1.5 V and gate-source voltage max is ±25 V.
Operating temperature range is from -55 °C to 150 °C ensuring reliability in diverse environments.
Ideal for applications in solar power converters, power supplies, and electronic lighting control systems.

Product Description

STMicroelectronics STP16N65M5 is an N-Channel MDmesh™ M5 series MOSFET designed for efficient power switching applications with a continuous drain current rating of 12 A and voltage rating of 650 V. It comes in a three-pin TO-220 through-hole package ideal for reliable mounting and cooling.

Its low on-state resistance and low gate charge make it particularly suited for high power factor correction (PFC) and pulse width modulation (PWM) topologies, improving energy efficiency and reducing losses.

This enhancement mode MOSFET supports a maximum power dissipation of 90 W and can operate over a wide temperature range from -55 °C to 150 °C, making it suitable for robust industrial and commercial applications.

With a maximum gate-source voltage of 25 V and a typical forward voltage of 1.5 V, it provides reliable switching performance in compact and energy-conscious designs.

Typical applications include solar power inverters, switched mode power supplies for consumer electronics, and electronic lighting controls, where efficiency and thermal management are critical.

This MDmesh M5 MOSFET offers low on-resistance of 299 mΩ ensuring minimal conduction losses. Compact TO-220 package dimensions: height 9.15 mm, width 4.6 mm, and length 10.4 mm enable efficient PCB integration. Three pins provide easy interfacing for control and power connections.

Through-hole mounting allows for secure attachment in industrial-grade assemblies. Capable of withstanding harsh temperature environments due to its wide operating range. Designed by STMicroelectronics, a trusted name in semiconductor solutions.

This power MOSFET series provides a dependable solution for engineers designing efficient power conversion modules, enhancing performance in photovoltaic systems and industrial PWM controls.

Explore further high-quality discrete semiconductor products and power MOSFETs at EnvMart for your electronics manufacturing and prototyping needs.