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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET, 9 A, 800 V Enhancement Mode, 3-Pin TO-220 STP10NK80Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP10NK80Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Features an enhancement mode channel for reliable switching performance.
- Constructed with a TO-220 package suitable for through-hole mounting.
- Maximum power dissipation rating of 160 W ensures robust handling of power loads.
- Operates within a temperature range from -55°C to 150°C.
- Incorporates a typical gate charge of 72 nC at Vgs for efficient gate control.
- Compact dimensions offer ease of installation in diverse industrial circuits.
Product Description
STMicroelectronics STP10NK80Z is a high-performance MDmesh SuperMESH N-Channel MOSFET suited for industrial and commercial electronic power applications requiring reliable switching and power handling. It features a continuous drain current of 9 A and a maximum drain-source voltage rating of 800 V, making it ideal for medium to high power circuits.
This device employs enhancement mode operation with a low drain-source resistance of 900 mΩ, contributing to improved efficiency and reduced heat generation during operation. Housed in a durable TO-220 package with a 3-pin configuration, it supports through-hole mounting, facilitating integration into various printed circuit boards and assemblies.
Thermal robustness is evident through a maximum power dissipation rating of 160 W and an operating temperature range from -55°C to 150°C, suitable for demanding environments including industrial and automotive electronics, although this model does not meet automotive standard certifications.
The STP10NK80Z incorporates a typical gate charge of 72 nC at the gate voltage, ensuring responsive gate control in switching operations. The gate-to-source voltage tolerance of ±30 V further enhances reliability and prevents damage under voltage spikes.
Enhancement mode N-Channel for efficient switching. TO-220 package supports effective heat dissipation and mounting flexibility. Continuous drain current rating: 9 A suitable for moderate power applications. High drain-source voltage withstand of 800 V supports robust operation.
Low Rds(on) of 900 mΩ minimizes conduction losses. Wide operating temperature range ensures durability in harsh conditions. Compact package dimensions facilitate space-efficient PCB layouts.
This MOSFET is widely used in industrial power supplies, motor drives, power converters, and other electronic control systems where high voltage and current handling capabilities are required.
EnvMart offers this STMicroelectronics MOSFET for efficient power control solutions supporting a diverse range of industrial, manufacturing, HVAC, and electronics applications. Browse our Electronics & Electricals category for more semiconductor devices and power components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9 A.
It has a maximum drain-source voltage rating of 800 V.
This model is housed in a TO-220 package, which supports through-hole mounting.
The operating temperature range is from -55°C to 150°C.
It incorporates a typical gate charge of 72 nC at the gate voltage.
The maximum power dissipation rating is 160 W.
The low drain-source resistance (Rds(on)) is 900 mΩ, which helps minimize conduction losses.
This model features an enhancement mode N-channel for efficient switching.
The height is 9.15 mm and the width is 4.6 mm.
It has a maximum gate-source voltage tolerance of ±30 V.
This MOSFET is widely used in industrial power supplies, motor drives, and power converters.
The forward voltage drop is 1.6 V.
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