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STMicroelectronics STripFET II N-Channel MOSFET 50A 60V Enhancement 3-Pin TO-263 STB55NF06T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB55NF06T4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 44.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features ultra-low on-resistance of 18mΩ for efficient power management.
- Equipped with 3 pins, it supports surface mounting for versatile PCB integration.
- Operates at maximum power dissipation of 110W suitable for high-performance applications.
- Enhanced with a typical gate charge of 44.5nC ensuring fast switching.
- Designed for durability with a maximum operating temperature of 175°C and wide temperature range from -55°C.
- Gate-source voltage rated at ±20V guarantees robust gate control.
- Ideal for industrial, electronic, and power management applications requiring reliable discrete semiconductors.
Product Description
STMicroelectronics STB55NF06T4 is a high-performance STripFET II N-Channel MOSFET designed for efficient power switching and control in electronic circuits. With a maximum continuous drain current of 50A and drain-source voltage of 60V, this device supports demanding industrial and commercial applications.
The device comes in a TO-263 package optimized for surface mount technology, providing compactness combined with effective thermal dissipation. It features an ultra-low on-resistance of 18mΩ and a typical gate charge of 44.5nC, enabling efficient energy use and fast switching capabilities.
Operating across a temperature range from -55°C to 175°C, it ensures reliable functionality in harsh environments. With a maximum power dissipation rating of 110W, the device supports robust performance in power electronics and semiconductor modules.
Physical dimensions of 10.4mm length, 9.35mm width, and 4.6mm height make it well suited for dense PCB layouts in industrial, laboratory, and manufacturing electronics assemblies.
Applications include use in power supplies, motor drives, lighting controls, and general industrial electronics. The robust channel mode enhancement and gate-source voltage ±20V rating provide durable electrical control.
This MOSFET features ultra-low on-resistance of 18mΩ for efficient power management. Equipped with 3 pins, it supports surface mounting for versatile PCB integration. Operates at maximum power dissipation of 110W suitable for high-performance applications.
Enhanced with a typical gate charge of 44.5nC ensuring fast switching. Designed for durability with a maximum operating temperature of 175°C and wide temperature range from -55°C. Gate-source voltage rated at ±20V guarantees robust gate control.
Compact physical dimensions: 10.4mm length, 9.35mm width, and 4.6mm height. Ideal for industrial, electronic, and power management applications requiring reliable discrete semiconductors. Browse our collection of industrial-grade MOSFETs and electronic components at EnvMart for quality and performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50A.
The maximum drain-source voltage is rated at 60V.
It features an ultra-low on-resistance of 18mΩ.
The typical gate charge is 44.5nC at Vgs.
It operates within a temperature range from -55°C to 175°C.
The dimensions are 10.4mm in length, 9.35mm in width, and 4.6mm in height.
This model supports surface mounting, optimized for PCB integration.
It has a maximum power dissipation rating of 110W.
The gate-source voltage is rated at ±20V.
This MOSFET is suitable for applications in power supplies, motor drives, lighting controls, and general industrial electronics.
The STB55NF06T4 is an N-channel MOSFET.
It belongs to the STripFET II series by STMicroelectronics.
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