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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 3.5 A 1 kV Enhancement 3-Pin TO-247 STW5NK100Z

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 20.15mm
Length 15.75mm
Model STW5NK100Z
Width 5.15mm
Mount Type Through Hole
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 3.5A
Maximum Drain Source Voltage Vds 1kV
Maximum Drain Source Resistance Rds 3.7Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 42nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • This enhancement mode MOSFET offers a maximum power dissipation of 125 watts.
  • It features a typical gate charge of 42nC at Vgs and a maximum drain source resistance of 3.7 ohms.
  • Designed for through hole mounting with a compact footprint of 15.75 x 20.15 x 5.15 mm.
  • Operates reliably within a temperature range from -55°C to 150°C.
  • Maximum gate source voltage is rated at -30 to +30 volts, with a forward voltage of 1.6 volts.
  • This transistor meets industrial standards but is not automotive certified.
  • Suitable for power electronics, switching, amplification, and other semiconductor applications.

Product Description

The STMicroelectronics STW5NK100Z is a high-performance MDmesh SuperMESH N-Channel MOSFET transistor designed for power electronics applications where efficient switching at high voltages is required. Featuring a maximum continuous drain current of 3.5 amperes and maximum drain source voltage rating of 1 kilovolt, this transistor is optimized for high voltage and power dissipation in a 3-pin TO-247 through hole package with dimensions 15.75 mm length, 20.15 mm height, and 5.15 mm width.

This enhancement mode MOSFET features a typical gate charge of 42 nanocoulombs at a given gate source voltage, ensuring fast switching capabilities. The device has a maximum drain source resistance of 3.7 ohms which allows for efficient conduction under load, along with a forward voltage drop of 1.6 volts.

Operating temperature ranges from -55°C minimum to 150°C maximum, supporting robust performance in demanding industrial environments. The transistor does not include automotive certification but conforms to general industrial semiconductor standards.

Its through hole mount type facilitates secure PCB integration, commonly used in power supply designs, motor drives, and inverter circuits. The 3-pin configuration simplifies connectivity and layout efficiency.

This MOSFET offers reliable performance for power switching and amplification. Compact TO-247 package supports effective heat dissipation. Maximum power dissipation is 125 watts, suitable for medium power applications. Wide operating temperature range supports harsh industrial conditions.

Ideal for use in power management, motor control, and high-voltage switching applications.

Backed by STMicroelectronics' quality and innovation, this device integrates well into various electronic and industrial tool designs. For more options and advanced semiconductors, browse the Electronics & Electricals category at EnvMart.

STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 3.5 A 1 kV Enhancement 3-Pin TO-247 STW5NK100Z
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Frequently Asked Questions

The maximum continuous drain current for this model is 3.5 amperes.

This MOSFET has a maximum drain source voltage rating of 1 kilovolt (1 kV).

The dimensions of the TO-247 package are 15.75 mm in length, 20.15 mm in height, and 5.15 mm in width.

It offers a maximum power dissipation of 125 watts.

The typical gate charge at Vgs is 42 nanocoulombs (nC).

The maximum drain source resistance for this model is 3.7 ohms.

It operates reliably within a temperature range from -55°C to 150°C.

This model is designed for through hole mounting.

The forward voltage drop is rated at 1.6 volts.

The maximum gate source voltage is rated at -30 to +30 volts.

It is suitable for power electronics, switching, amplification, and other semiconductor applications.

This model belongs to the MDmesh and SuperMESH series.

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