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STMicroelectronics MDmesh M5 N-Channel MOSFET 33 A 650 V Enhancement 3-Pin TO-220 STP42N65M5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP42N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 79mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 100nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Offers a maximum continuous drain current of 33 A for robust performance.
- Maximum drain-source voltage of 650 V ensuring high voltage tolerance.
- Features a 3-pin TO-220 package for easy through-hole mounting.
- Utilizes enhancement mode channel operation for reliable switching.
- Has a low drain-source resistance of 79 mΩ reducing power loss.
- Maximum power dissipation rating of 190 W supports high power applications.
- Operating temperature range from -55°C to 150°C for versatility.
- Typical gate charge of 100 nC supporting efficient gate control.
Product Description
STMicroelectronics STP42N65M5 is an N-channel MDmesh™ M5 series Power MOSFET designed for demanding power switching applications.
Featuring a maximum continuous drain current of 33 amperes and a maximum drain-source voltage of 650 volts, this device is optimized for high-power PFC and PWM topologies where energy efficiency and low conduction losses are critical.
This transistor comes in a 3-pin TO-220 package that facilitates through hole mounting and robust mechanical stability. Its enhancement-mode operation combined with a low drain-source resistance of 79 milliohms enables low power dissipation during conduction.
With a maximum power dissipation of 190 watts and a wide operating temperature range from minus 55 to plus 150 degrees Celsius, the STP42N65M5 is suited for industrial, HVAC, and power supply applications requiring reliable, high voltage switching capabilities.
The device exhibits a typical gate charge of 100 nanocoulombs, which assists in efficient hard switching performance while maintaining reduced switching losses.
Its compact footprint (9.15 mm height, 10.4 mm length, 4.6 mm width) makes it ideal for energy-conscious, compact designs including solar power converters, power supplies for consumer electronics, and electronic lighting control systems.
Maximum continuous drain current of 33 A enables high current capacity. 650 V maximum drain-source voltage for high voltage application. Through hole 3-pin TO-220 package for easy circuit integration. Enhancement channel type offers effective switching performance.
Low on resistance minimizes conduction losses. Power dissipation rated at 190 W supports industrial-grade operation. Extended temperature operation from -55°C to 150°C. Typical gate charge provides efficient drive characteristics.
No special automotive or other certifications, suitable for general industrial use. Compact dimensions fit a variety of power electronic assemblies.
This MOSFET is ideal for industrial, laboratory, construction, HVAC, manufacturing, and renewable energy sectors. It offers reliable switching and power handling for efficient system design.
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Frequently Asked Questions
The maximum continuous drain current for this model is 33 A.
It has a maximum drain-source voltage of 650 V, ensuring high voltage tolerance for various applications.
This MOSFET comes in a 3-pin TO-220 package, which facilitates through-hole mounting.
The typical gate charge for this model is 100 nC, supporting efficient gate control.
The operating temperature range is from -55°C to 150°C, providing versatility in various environments.
It has a maximum power dissipation rating of 190 W, making it suitable for high power applications.
The maximum drain-source resistance is 79 mΩ, which helps in reducing power loss during operation.
This model is suited for industrial, HVAC, and power supply applications requiring reliable high voltage switching capabilities.
The dimensions are 9.15 mm in height, 10.4 mm in length, and 4.6 mm in width.
It utilizes an enhancement mode channel operation for reliable switching performance.
The maximum gate-source voltage is -25 V to +25 V, allowing for flexible drive conditions.
The country of origin for this product is India.
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