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STMicroelectronics STripFET II N-Channel MOSFET 35A 100V Enhancement 3-Pin TO-263 STB30NF10T4

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STMicroelectronics STripFET II N-Channel MOSFET 35A 100V Enhancement 3-Pin TO-263 STB30NF10T4

Name: STMicroelectronics STripFET II N-Channel MOSFET 35A 100V Enhancement 3-Pin TO-263 STB30NF10T4
Brand: STMicroelectronics
SKU: 350372
Price: 1.34 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	4.6mm
Length	10.4mm
Model	STB30NF10T4
Width	9.35mm
Mount Type	Surface
Series	STripFET II
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	35A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	45mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	115W
Typical Gate Charge Qg @ Vgs	40nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V

Key Features

Features ultra-low gate charge for efficient switching.
Constructed with a surface mount design suitable for automated PCB assembly.
Supports a maximum power dissipation of 115 watts ensuring robust performance.
Operates within a wide temperature range from -55°C to 175°C.
Low maximum drain-source resistance of 45 milliohms reduces conduction losses.
Enhancement mode channel type with a typical gate charge of 40 nanocoulombs at Vgs.
MOSFET provides a forward voltage of 1.3 volts making it suitable for power applications.
Encapsulated in TO-263 package with compact dimensions for space-constrained circuits.

Product Description

STMicroelectronics STB30NF10T4 is a N-Channel STripFET II type MOSFET designed for efficient power switching in electronic circuits. It features a maximum continuous drain current rating of 35 amperes and a maximum drain-source voltage of 100 volts, housed in a durable 3-pin TO-263 package with a surface mount design.

This MOSFET incorporates ST's STripFET II technology, providing ultra-low gate charge and low on-resistance, which contribute to increased efficiency and reduced power loss in switching applications. The device supports a maximum power dissipation of 115 watts and operates reliably over a broad temperature range from -55°C minimum to 175°C maximum.

Given its characteristics, this MOSFET is suitable for various applications including industrial electronics, automotive power management, and commercial equipment where high current switching and thermal performance are critical.

Ultra-low gate charge enables faster switching and improved efficiency. Robust power dissipation capacity supports demanding power requirements. Wide operating temperature range enhances reliability in harsh environments.

Compact TO-263 package facilitates space-saving PCB layouts. Low on-resistance reduces conduction losses and heat generation. Surface mount package designed for automated assembly and high volume production.

This component is ideal for designers and engineers requiring reliable N-channel MOSFETs for power switching and driver circuits in a variety of industrial, automotive, and commercial electronic systems.

Explore the Electronics & Electricals category on EnvMart for a comprehensive selection of discrete semiconductors including MOSFETs and other power management devices.