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STMicroelectronics STripFET II N-Channel MOSFET 80A 100V Enhancement 3-Pin TO-263 STB80NF10T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB80NF10T4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 135nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 80 amperes for robust power handling.
- Drain-source voltage rated at 100 volts ensuring reliable switching.
- 3-pin TO-263 package designed for surface mounting with compact dimensions.
- Low maximum drain-source resistance of 15 milliohms minimizes power loss.
- High maximum power dissipation of 300 watts supports demanding applications.
- Wide operating temperature range from -55°C to 175°C for versatility.
- Typical gate charge of 135 nanocoulombs at Vgs ensures fast switching.
- Maximum gate-source voltage rating of -20 to +20 volts for durability.
Product Description
STMicroelectronics STB80NF10T4 is a N-Channel STripFET™ II MOSFET transistor designed for efficient switching and power management in industrial and electronic applications. Featuring a maximum continuous drain current of 80A and a drain-source voltage rating of 100V, this device provides reliable performance under demanding electrical loads. Its enhancement mode channel and ultra-low on-resistance with 15mΩ maximum Rds enable energy-efficient operation, minimizing heat generation and power loss.
Housed in a compact 3-pin TO-263 package, it supports surface mounting to optimize circuit board space. The device can withstand high power dissipation up to 300W and operates effectively over a broad temperature range from -55°C to 175°C, making it suitable for applications including power supplies, motor controls, lighting systems, and industrial automation.
The typical gate charge of 135nC at specified gate voltage assures fast switching speeds, enhancing system responsiveness. The gate-source voltage rating of -20 to +20V provides robustness against voltage spikes and transient conditions.
With physical dimensions of 10.4mm length, 9.35mm width, and 4.6mm height, the STB80NF10T4 integrates seamlessly into compact designs requiring high power MOSFET solutions. Although it lacks specific automotive certification, it is highly suited for commercial and industrial semiconductor needs.
Maximum continuous drain current: 80A. Drain-source voltage: 100V. Package type: TO-263 with 3 pins, surface mount. Maximum power dissipation: 300W. Low Rds(on) of 15 milliohms for energy efficiency. Wide operating temperature from -55°C to 175°C.
Gate charge optimized for fast switching performance. Robust gate-source voltage tolerances. Compact and sturdy package dimensions.
This MOSFET is recommended for use in industrial electronics, power conversion, thermal management systems, power supply design, and other advanced electrical engineering applications. It provides a reliable and efficient switching performance to improve overall system effectiveness.
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Frequently Asked Questions
The maximum continuous drain current for the STB80NF10T4 is 80 amperes.
This model has a drain-source voltage rating of 100 volts.
It is housed in a compact 3-pin TO-263 package designed for surface mounting.
The maximum power dissipation for the STB80NF10T4 is 300 watts.
The maximum drain-source resistance (Rds(on)) is 15 milliohms, which helps minimize power loss.
It operates effectively over a wide temperature range from -55°C to 175°C.
The typical gate charge at specified gate voltage (Vgs) is 135 nanocoulombs.
The maximum gate-source voltage rating is -20 to +20 volts, providing robustness against voltage spikes.
The dimensions are 10.4mm in length, 9.35mm in width, and 4.6mm in height.
This model features an N-channel type, designed for efficient switching.
It is suitable for applications including power supplies, motor controls, lighting systems, and industrial automation.
The STB80NF10T4 belongs to the STripFET II series.
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