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STMicroelectronics N-Channel IGBT 54 A 600 V, 3-Pin TO-247 Through Hole STGW20NC60VD

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STMicroelectronics N-Channel IGBT 54 A 600 V, 3-Pin TO-247 Through Hole STGW20NC60VD

Name: STMicroelectronics N-Channel IGBT 54 A 600 V, 3-Pin TO-247 Through Hole STGW20NC60VD
Brand: STMicroelectronics
SKU: 350128
Price: 3.26 USD
Availability: InStock

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Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	20.15mm
Length	15.75mm
Model	STGW20NC60VD
Width	5.15mm
Mount Type	Through Hole
Series	SMPS
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Standards/Approvals	JEDEC
Pin Count	3
Maximum Continuous Collector Current Ic	54A
Maximum Collector Emitter Voltage Vceo	600V
Maximum Collector Emitter Saturation Voltage VceSAT	2.7V
Channel Type	N
Maximum Power Dissipation Pd	167W
Maximum Gate Emitter Voltage VGEO	±20 V
Infineon IRGP4063DPBF Single IGBT, 96 A 600 V, 3-Pin TO-247AC, Through HoleBrand	Infineon
Fairchild HGTG12N60A4D IGBT, 54 A 600 V, 3-Pin TO-247, Through HoleBrand	Fairchild Semiconductor

Key Features

This IGBT features a maximum power dissipation of 167 Watts.
It utilizes a through hole mount type for secure fixture.
Rated for operating temperatures from -55°C up to 150°C.
The switching speed is 70 nanoseconds for efficient performance.
Maximum gate-emitter voltage rating is ±20 Volts.
Complies with JEDEC standards for reliability.
Designed for high-efficiency power conversion applications.
Ideal for industrial, power electronics, and manufacturing applications requiring robust discrete IGBTs.

Product Description

STMicroelectronics STGW20NC60VD is an N-Channel insulated gate bipolar transistor (IGBT) designed for high efficiency and fast switching power control. It supports a maximum continuous collector current of 54 A and a maximum collector-emitter voltage of 600 V. Encapsulated in a robust 3-Pin TO-247 Through Hole package, it ensures ease of installation and durability in demanding electrical environments.

This discrete power semiconductor device has a maximum power dissipation of 167 W, making it suitable for applications requiring reliable thermal management. The device maintains stable operation over a wide temperature range from -55°C to 150°C, ensuring performance in industrial and harsh environments.

The switching speed of 70 ns combined with a maximum gate-emitter voltage of ±20 V optimizes control precision and protects the device from electrical stress. Compliant with JEDEC standards, it meets industry benchmarks for quality and interoperability.

Physical dimensions are height 20.15 mm, length 15.75 mm, and width 5.15 mm, facilitating integration in various embedded system designs and power modules.

This IGBT is well-suited for use in power electronics, industrial machinery, motor drives, and power supply units, where efficient switching and high current capabilities are essential.

This IGBT provides high-efficiency and fast switching for power control. It features a 3-Pin TO-247 Through Hole packaging for easy mounting. With a 54 A continuous collector current, it supports robust power handling. Rated for up to 600 V collector-emitter voltage, suitable for high-voltage applications.

Maximum power dissipation of 167 W enables effective thermal operation. Operating temperature range from -55°C to 150°C ensures reliability. Switching speed of 70 nanoseconds allows fast response time. Complies with JEDEC standards for assured quality.

Explore the Electronics & Electricals category on EnvMart for reliable discrete semiconductor components like IGBTs for your industrial and manufacturing needs.