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onsemi Digital Transistor 600 mA NPN 40 V TO-92 3-Pin 2N4401TFR

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onsemi Digital Transistor 600 mA NPN 40 V TO-92 3-Pin 2N4401TFR

Name: onsemi Digital Transistor 600 mA NPN 40 V TO-92 3-Pin 2N4401TFR
Brand: onsemi
SKU: 319744
Price: 0.06 USD
Availability: InStock

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Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	20.95mm
Length	5.2mm
Model	2N4401TFR
Width	4.19mm
Mount Type	Through Hole
Series	2N4401
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	20
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V dc
Maximum Collector Base Voltage VCBO	60V
Maximum Power Dissipation Pd	1.5W
Maximum DC Collector Current Idc	600mA
Transistor Configuration	Single

Key Features

Maximum DC collector current of 600 mA allows moderate power switching.
Maximum collector emitter voltage of 40 V suitable for many linear and switching circuits.
TO-92 package ensures easy through-hole mounting and good thermal performance.
Minimum DC current gain (hFE) of 20 enables reliable amplification.
Operates in a temperature range from -55°C to 150°C for versatile environmental conditions.
Maximum power dissipation of 1.5 W suits medium power applications.
Single transistor configuration with 3 pins simplifies circuit design.
Transistor polarity is NPN type, commonly used in general purpose amplification and switching.

Product Description

onsemi 2N4401TFR Digital Transistor is an NPN bipolar transistor engineered for linear and switching applications in industrial electronics. It supports a maximum DC collector current of 600 mA and a collector emitter voltage up to 40 V. Housed in a TO-92 package with 3 pins, it facilitates easy through-hole mounting on printed circuit boards.

This transistor features a minimum DC current gain (hFE) of 20, making it suitable for amplification tasks, while its maximum power dissipation is rated at 1.5 W. It can operate reliably in harsh temperature environments from -55°C to 150°C. The transistor configuration is single, and polarity is NPN, suitable for a wide range of switching and amplification circuits.

Physical dimensions include a height of 20.95 mm, length of 5.2 mm, and width of 4.19 mm, providing a compact footprint for PCB layouts. The maximum collector base voltage is 60 V, and emitter base voltage is 6 V DC, meeting the needs of various design requirements.

The 2N4401TFR transistor is perfect for applications in industrial automation, power management, consumer electronics, and communication devices. Its TO-92 package offers robust medium power handling while adhering to common industry standards.

Maximum DC collector current of 600 mA allows moderate power switching. Maximum collector emitter voltage of 40 V suitable for many linear and switching circuits. TO-92 package ensures easy through-hole mounting and good thermal performance.

Minimum DC current gain (hFE) of 20 enables reliable amplification. Operates in a temperature range from -55°C to 150°C for versatile environmental conditions. Maximum power dissipation of 1.5 W suits medium power applications.

Single transistor configuration with 3 pins simplifies circuit design. Pin dimensions and package size are compact: height 20.95 mm, length 5.2 mm, width 4.19 mm. Transistor polarity is NPN type, commonly used in general purpose amplification and switching.

Designed for linear and switching applications in industrial and electronic circuits. Discover a wide range of semiconductor Digital Transistors on EnvMart crafted to meet demanding industrial, laboratory, and commercial electronic needs.

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Frequently Asked Questions

The maximum DC collector current for this model is 600 mA, allowing for moderate power switching applications.

The maximum collector emitter voltage (Vceo) is 40 V, making it suitable for various linear and switching circuits.

This transistor operates in a temperature range from -55°C to 150°C, allowing it to function in diverse environmental conditions.

The 2N4401TFR is housed in a TO-92 package, which supports easy through-hole mounting on printed circuit boards.

The minimum DC current gain (hFE) for the 2N4401TFR is 20, enabling reliable amplification in various applications.

The physical dimensions of the 2N4401TFR are 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width.

The maximum power dissipation for this model is rated at 1.5 W, suitable for medium power applications.

The transistor polarity of this model is NPN, which is commonly used for general-purpose amplification and switching.

The maximum emitter base voltage (VEBO) for the 2N4401TFR is 6 V DC.

This transistor is designed for linear and switching applications in industrial automation, power management, consumer electronics, and communication devices.

The 2N4401TFR has a single transistor configuration with 3 pins, simplifying circuit design.