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onsemi QFET N-Channel MOSFET 8 A 800 V Enhancement 3-Pin TO-220F FQPF8N80C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.19mm |
| Length | 10.16mm |
| Model | FQPF8N80C |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.55Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 178W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- The device features enhancement mode operation for efficient switching performance.
- Maximum continuous drain current is rated at 8 amperes for robust load handling.
- The maximum drain-source voltage reaches up to 800 volts for high-voltage applications.
- Designed with a 3-pin configuration suitable for through-hole mount.
- The low drain-source resistance of 1.55 ohms reduces conduction losses.
- The device supports gate-source voltage from -30 V to +30 V enabling flexible drive control.
- Power dissipation capability is 178 watts allowing for thermal stability in demanding environments.
- Operational temperature range is wide, from -55°C to 150°C for industrial reliability.
Product Description
onsemi FQPF8N80C is a QFET planar N-Channel MOSFET transistor designed for industrial and electronic applications requiring high voltage and load current handling. Packaged in a TO-220F 3-pin form factor, the device supports through-hole mounting for secure PCB integration. It operates in enhancement mode with a maximum continuous drain current of 8 A and a maximum drain-source voltage of 800 V. Its low on-resistance (Rds) of 1.55 ohms reduces conduction losses and improves efficiency.
Designed with a maximum power dissipation of 178 W, this MOSFET is suitable for power supplies, power factor correction circuits, DC-DC converters, lighting ballasts, motion control, and plasma display panel applications. The gate-source voltage range from -30 V to +30 V allows for flexible circuit design and control.
The device can operate reliably over a temperature range from -55°C to 150°C, providing durable operation in harsh industrial and commercial environments. Typical gate charge of 35 nC ensures reduced switching losses, thus improving performance at high switching frequencies.
onsemi maintains compliance with RoHS standards ensuring the product meets environmental and safety regulations. The QFET N-Channel MOSFET provides excellent switching and conduction performance. High drain current and voltage ratings make it versatile for various power electronics.
The TO-220F package supports easy assembly and robust mounting. Wide operating temperature range for industrial and commercial reliability. Low gate charge and on-resistance optimize switching efficiency.
Ideal for use in industrial electronics, power management systems, HVAC controls, motor drives, and other applications requiring efficient and reliable MOSFET performance. Explore onsemi's full range of discrete semiconductors and power management solutions at EnvMart for your sustainable industrial needs.
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Frequently Asked Questions
The maximum continuous drain current of the FQPF8N80C is rated at 8 amperes.
This MOSFET can handle a maximum drain-source voltage of 800 volts.
It is packaged in a TO-220F form factor suitable for through-hole mounting.
The operational temperature range for this model is from -55°C to 150°C.
The FQPF8N80C supports a gate-source voltage range from -30 V to +30 V.
The typical gate charge at the specified gate-source voltage is 35 nC.
This model has a maximum power dissipation capability of 178 watts.
The low drain-source resistance is rated at 1.55 ohms, which helps reduce conduction losses.
This MOSFET is suitable for applications such as power supplies, power factor correction circuits, DC-DC converters, and motor drives.
The FQPF8N80C features a 3-pin configuration.
Yes, this device complies with RoHS standards, ensuring it meets environmental and safety regulations.
It features an N-channel configuration, designed for enhancement mode operation.
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