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onsemi QFET N-Channel MOSFET, 8 A, 900 V Enhancement, 3-Pin TO-220 FQP9N90C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.1mm |
| Model | FQP9N90C |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 205W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- This MOSFET features a maximum continuous drain current of 8 amperes.
- The device has a maximum drain-source voltage rating of 900 volts for high voltage applications.
- It employs enhancement mode channel operation with a gate-source voltage range of -30 to +30 volts.
- The MOSFET has a low on-resistance of 1.4 ohms improving efficiency.
- Typical gate charge is 45 nanocoulombs, reducing switching losses.
- Maximum power dissipation is 205 watts, suitable for demanding power circuits.
- Operating temperature ranges from -55°C to 150°C for reliability in harsh environments.
- The package type is TO-220 with through-hole mount configuration and 3 pins.
Product Description
onsemi FQP9N90C is a QFET® N-Channel Enhancement Mode MOSFET designed for applications requiring robust high-voltage, high-current switching capabilities. This device operates at a maximum continuous drain current of 8 amperes and can withstand drain-source voltages up to 900 volts, making it ideal for power supply circuits, power factor correction (PFC), DC-DC converters, lighting ballasts, plasma display panels, and motion control systems.
The MOSFET features advanced planar QFET technology to minimize on-state resistance (RDS(on)) and gate charge (Qg), which reduces conduction and switching losses, improving overall efficiency. Typical gate charge of 45nC enables faster switching speeds, while the low 1.4Ω drain-source resistance helps reduce power dissipation during operation. This device is packaged in a standard TO-220 through-hole format with 3 pins, allowing easy heat sinking and mounting in industrial control and power circuits.
It maintains reliable operation across a wide temperature range from -55°C to 150°C, ensuring stable performance under harsh conditions. The device has a maximum power dissipation rating of 205 W, allowing it to handle high load currents without overheating. The physical size of 10.1 x 9.4 x 4.7 mm supports compact designs where space is limited.
Typical uses span industrial, laboratory, construction, HVAC, and manufacturing settings where efficient power switching is critical. The absence of automotive certification indicates its primary orientation to general industrial applications rather than specific automotive demands.
Maximum continuous drain current: 8A for reliable high current operation. Maximum drain-source voltage: 900V suitable for high voltage applications. Enhancement mode channel operation for efficient switching. Low on-resistance of 1.4Ω minimizes conduction losses.
Typical gate charge of 45nC reduces switching power losses. Power dissipation up to 205W. Operating temperature from -55°C to 150°C permits use in demanding environments. TO-220 package with 3-pin through-hole for durable mounting.
This onsemi FQP9N90C N-Channel MOSFET combines high voltage handling, current capacity, and efficient switching characteristics, making it suitable for diverse industrial and electronic component applications. Explore more semiconductor solutions in the MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 amperes.
It has a maximum drain-source voltage rating of 900 volts, suitable for high voltage applications.
The on-resistance (RDS(on)) of this model is 1.4 ohms, which helps improve efficiency.
The typical gate charge for this MOSFET is 45 nanocoulombs, which reduces switching losses.
This model has a maximum power dissipation rating of 205 watts, allowing it to handle high load currents.
The operating temperature range is from -55°C to 150°C, ensuring reliable performance in harsh environments.
It is packaged in a TO-220 format with a through-hole mount configuration and 3 pins.
The channel type of this device is N-channel, designed for enhancement mode operation.
The dimensions are 10.1 mm in length, 9.4 mm in height, and 4.7 mm in width.
The maximum gate-source voltage is -30 to +30 volts, allowing for flexible control.
This MOSFET is suitable for applications such as power supply circuits, DC-DC converters, and motion control systems.
The forward voltage of this model is 1.4 volts.
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