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onsemi QFET Type P-Channel MOSFET, 47 A, 60 V Enhancement Mode, 3-Pin TO-263 FQB47P06TM-AM002
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FQB47P06TM-AM002 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 47A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 26mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- Operates with an enhancement mode channel for controlled switching.
- Maximum power dissipation is 3.75 watts for reliable operation.
- Surface mount device with low on-state resistance of 26 milliohms.
- Designed for high-density DMOS technology ensuring rugged performance.
- Suitable for load switching, DC/DC converters, and power management applications.
- Wide operating temperature range from -55°C to 175°C.
- Features a maximum gate-source voltage range of -25 to +25 volts.
- Compact dimensions of 10.67 mm length, 9.65 mm width, and 4.83 mm height.
Product Description
onsemi FQB47P06TM-AM002 is a high-performance, P-Channel QFET MOSFET transistor designed for industrial and commercial electronic applications. It features a maximum continuous drain current of 47 amperes and a maximum drain-source voltage rating of 60 volts. Packaged in a compact 3-pin TO-263 surface mount format, this device utilizes ON Semiconductor's proprietary high cell density DMOS technology, enabling minimal on-state resistance for superior efficiency and durability.
The device operates in enhancement mode, providing voltage-controlled switching suitable for applications that demand fast and reliable switching capabilities. With a maximum power dissipation of 3.75 watts, this MOSFET ensures thermal robustness in demanding environments. It supports a wide operating temperature range from -55°C to 175°C, making it ideal for harsh industrial conditions.
Key features such as a typical gate charge of 84 nanocoulombs at gate-source voltage, and gate-source voltage tolerance from -25 to +25 volts enhance switching performance and protect against voltage spikes. The transistor's small form factor with dimensions of 10.67 mm length, 9.65 mm width, and 4.83 mm height allows integration into densely packed circuit boards.
High-density cell design for minimum on-resistance and low power loss. Voltage controlled P-Channel switch suitable for load switching and power management. Robust DMOS technology for long-term reliability and fast switching.
Wide operating temperature range suitable for automotive and industrial environments. Compact TO-263 surface mount package supports easy PCB mounting. Applications include DC/DC converters, battery protection, DC motor control, and power management circuits.
This MOSFET is well-suited for a range of industrial electronics, manufacturing, power supply designs, and automotive applications requiring efficient power switching. It is a part of ON Semiconductor's extensive portfolio of MOSFET devices engineered for performance and reliability.
Browse the Electronics & Electricals, Discrete Semiconductors, and MOSFET categories at EnvMart to explore this and other high-quality semiconductors.
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Frequently Asked Questions
The maximum continuous drain current for this model is 47 amperes.
This MOSFET has a maximum drain-source voltage rating of 60 volts.
The on-state resistance is 26 milliohms, which contributes to its efficiency.
It has a maximum power dissipation of 3.75 watts.
The operating temperature range is from -55°C to 175°C.
The dimensions of this model are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
It is packaged in a compact 3-pin TO-263 surface mount format.
The maximum gate-source voltage tolerance is from -25 to +25 volts.
This model utilizes ON Semiconductor's high cell density DMOS technology for improved performance.
The typical gate charge at gate-source voltage is 84 nanocoulombs.
This device features a P-Channel type configuration.
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