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onsemi QFET N-Channel MOSFET 10.5 A 400 V Enhancement Mode 3-Pin TO-220 FQP11N40C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.1mm |
| Model | FQP11N40C |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.5A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 530mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 135W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Capable of maximum continuous drain current of 10.5 A.
- Supports a maximum drain-source voltage of 400 V for high voltage applications.
- Enhancement mode N-channel device ensuring normally-off performance.
- Package type TO-220 suitable for through-hole mounting.
- Low on-resistance of 530 mΩ reducing conduction losses.
- Maximum power dissipation rating of 135 W for robust operation.
- Typical gate charge of 28 nC enables fast switching.
- Operating temperature range from -55 °C to 150 °C.
Product Description
onsemi FQP11N40C is a QFET® N-Channel MOSFET designed for applications requiring efficient power switching and high voltage capability. With a continuous drain current rating of 10.5 A and a drain-source voltage of 400 V, this device is well-suited for power supply circuits, power factor correction, DC-DC converters, and motion control systems.
The enhancement mode N-channel device features a low on-resistance of 530 milliohms which contributes to reduced power loss and improved thermal performance. Its typical gate charge of 28 nanocoulombs allows for rapid switching speeds, enhancing circuit efficiency and responsiveness.
Encased in a TO-220 three-pin package, the MOSFET supports through-hole mounting, facilitating ease of installation in various industrial and laboratory power electronics setups. The robust maximum power dissipation of 135 watts and wide operating temperature range from -55 °C to 150 °C assure reliability under demanding conditions.
This MOSFET's compact footprint requires minimal board space with dimensions measuring 10.1 mm in length, 4.7 mm in width, and 9.4 mm in height, making it suitable for compact designs.
Maximum continuous drain current: 10.5 A. Maximum drain-source voltage: 400 V. On-resistance: 530 mΩ. Typical gate charge: 28 nC. Package: TO-220, 3-pin, through-hole. Maximum power dissipation: 135 W. Operating temperature range: -55 °C to 150 °C.
Forward voltage: 1.4 V. Dimensions: 10.1 mm (L) x 4.7 mm (W) x 9.4 mm (H).
Typical industrial and commercial applications include power supplies, DC-DC converters, power factor correction systems, lighting ballasts, plasma display panels, and motor drive electronics. The device leverages onsemi's advanced QFET® technology to deliver optimized electrical performance with low conduction and switching losses.
Explore more semiconductor products and solutions with onsemi at EnvMart for your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.5 A.
It supports a maximum drain-source voltage of 400 V, making it suitable for high voltage applications.
This model comes in a TO-220 package type, which is designed for through-hole mounting.
The on-resistance is 530 mΩ, which helps reduce conduction losses.
The typical gate charge is 28 nC, allowing for fast switching capabilities.
The operating temperature range is from -55 °C to 150 °C.
The dimensions are 10.1 mm in length, 4.7 mm in width, and 9.4 mm in height.
It has a maximum power dissipation rating of 135 W, ensuring robust operation.
This MOSFET is suitable for applications such as power supplies, DC-DC converters, and motor drive electronics.
The forward voltage is 1.4 V.
The maximum gate-source voltage is -30 V to +30 V.
It features an enhancement mode N-channel design, ensuring normally-off performance.
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