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onsemi QFET Type P-Channel MOSFET 47 A, 60 V Enhancement 3-Pin TO-263 FQB47P06TM-AM002
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FQB47P06TM-AM002 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 47A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 26mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- Designed with a maximum continuous drain current of 47 A.
- Operates at a maximum drain source voltage of 60 V.
- Features a surface mount TO-263 package with 3 pins for easy integration.
- Utilizes high-density DMOS technology for reduced on-state resistance.
- Supports a wide operating temperature range from -55°C to 175°C.
- Maximum power dissipation rating of 3.75 W ensures reliable operation.
- Typical gate charge is 84 nC at the gate-source voltage.
- Includes protection with a maximum gate-source voltage of -25 V to +25 V.
Product Description
onsemi FQB47P06TM-AM002 is a QFET type P-Channel enhancement mode MOSFET designed for efficient power management and load switching in electronic circuits.
Built using ON Semiconductor's proprietary high cell density DMOS technology, this MOSFET offers superior switching performance and rugged reliability with minimized on-state resistance. It supports a maximum continuous drain current of 47 amperes and a maximum drain-source voltage of 60 volts.
The device comes in a compact TO-263 surface mount package with 3 pins, making it suitable for low-profile industrial and commercial electronic assemblies. It operates effectively within a temperature range from -55°C to 175°C and can dissipate power up to 3.75 watts.
This MOSFET supports a typical gate charge of 84 nC at Vgs, facilitating fast switching speeds required in applications such as DC/DC converters, battery protection, power management controls, and DC motor drives.
Maximum continuous drain current of 47 A ensures robust power handling. 60 V maximum drain-source voltage suitable for medium voltage circuits. Low on-resistance due to high-density cell DMOS technology. 3-pin TO-263 package for surface mount PCB assembly.
Wide operating temperature range from -55°C to 175°C for demanding environments. Maximum power dissipation rating at 3.75 W for reliable thermal performance. Gate-source voltage tolerance from -25 V to +25 V provides protection.
Compact dimensions enable efficient space utilization.
This MOSFET is ideal for industrial, automotive, and commercial equipment requiring reliable and efficient switching. Onsemi's portfolio offers a broad range of MOSFET devices suited for various high and low voltage applications ensuring adaptable performance.
Explore more on semiconductor discrete components at EnvMart to find solutions tailored to your electronic design needs.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 47 A.
This MOSFET operates at a maximum drain-source voltage of 60 V.
It comes in a TO-263 surface mount package with 3 pins.
The maximum power dissipation rating for this unit is 3.75 W.
The typical gate charge is 84 nC at the gate-source voltage.
It operates effectively within a temperature range from -55°C to 175°C.
The maximum gate-source voltage tolerance is from -25 V to +25 V.
The dimensions are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
This model features a P-Channel type channel.
The maximum drain-source resistance is 26 mΩ.
The country of origin for this model is India.
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