onsemi QFET N-Channel MOSFET, 70 A, 100 V Enhancement, 3-Pin TO-3PN FQA70N10

onsemi FQA70N10 is a high-performance QFET N-Channel MOSFET designed for power electronic applications demanding efficient switching and low losses. Housed in a robust 3-Pin TO-3PN through-hole package, this device delivers a maximum continuous drain current of 70 amperes and a maximum drain-source voltage of 100 volts, ideal for power supplies, PFC circuits, DC-DC converters, plasma displays, lighting ballasts, and motor control systems.

The FQA70N10 uses advanced planar QFET technology that significantly reduces on-state resistance (Rds(on)) and typical gate charge (Qg), resulting in lower thermal dissipation and enhanced efficiency. Its maximum power dissipation rating of 214 watts enables reliable operation under heavy load and demanding conditions.

Engineered to withstand extreme operating temperatures from -55°C to 175°C, this MOSFET offers durability and stability in industrial, commercial, and automotive electronics.

The device features a gate voltage tolerance from -25 volts to +25 volts and a low forward voltage drop of 1.5 volts. Its physical size with a height of 18.9 mm, width of 5 mm, and length of 15.8 mm facilitates integration into compact designs requiring through-hole mounting.

This MOSFET meets rigorous technical standards and does not carry specific automotive or other certifications but is suitable for a range of electronic and power management systems.

This MOSFET features a low maximum drain-source resistance of 23 milliohms to reduce on-state losses. It dissipates a maximum power of 214 watts ensuring high power handling capability. The device operates within a wide temperature range from -55°C to 175°C for reliability in harsh environments.

Designed with through-hole mount type and 3-pin configuration for ease of PCB integration. Typical gate charge is 85 nanocoulombs, enabling efficient switching performance. The maximum gate-source voltage is rated at -25V to +25V, supporting robust gate drive conditions.

Physical dimensions include length 15.8 mm, width 5 mm, and height 18.9 mm, suitable for compact layouts. Forward voltage drop is 1.5V, optimizing conduction efficiency.

Applications include industrial power supplies, power factor correction circuits, DC-DC converters, lighting ballast controls, plasma display panels, and motion control systems. This device offers reliable and efficient performance in various electronic component assemblies.

Explore onsemi products and related MOSFET components in the Electronics & Electricals category at EnvMart for comprehensive power management solutions.