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onsemi QFET Type P-Channel MOSFET, 47 A, 60 V Enhancement, 3-Pin TO-220 FQP47P06
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.1mm |
| Model | FQP47P06 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 47A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 26mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- Rated for maximum continuous drain current of 47 amperes.
- Supports a maximum drain-source voltage of 60 volts.
- Low on-resistance of 26 milliohms to reduce power losses.
- Enhancement mode channel operation for controlled switching.
- High power dissipation capacity of 160 watts.
- Operating temperature range from -55°C up to 175°C.
- Typical gate charge of 84 nanocoulombs at gate-source voltage.
- Maximum gate-source voltage ratings of -25 V to +25 V.
Product Description
onsemi FQP47P06 is a high-performance QFET planar P-Channel MOSFET designed for power management and switching applications. It features an enhancement mode gate channel with a maximum continuous drain current rating of 47 amperes and a maximum drain-source voltage of 60 volts, making it suitable for medium power DC-DC converters, power factor correction circuits, and motion control systems.
This device utilizes proprietary Fairchild Semiconductor QFET process technology to lower on-state resistance (Rds(on)) to 26 milliohms, minimizing conduction losses and improving efficiency. Its typical gate charge of 84 nanocoulombs and output capacitance enhance switching speeds and reduce switching losses, beneficial in high-frequency power applications.
The FQP47P06 has an operating temperature range from -55°C to 175°C, assuring robust performance in demanding industrial, automotive, and commercial environments. The device is housed in a TO-220 package, supporting through-hole mounting for reliable mechanical and thermal connections.
Key features include a 3-pin layout for simplified circuit integration, a maximum power dissipation of 160 watts allowing high power handling, and gate voltage tolerances ranging from -25 volts to +25 volts, protecting against voltage spikes.
Typical applications for this MOSFET include power supplies, plasma display panels, lighting ballasts, and various power conversion and control circuits in industrial and electronic systems.
Rated continuous drain current of 47 A for demanding power requirements. Voltage rating of 60 V for medium voltage applications. Low on-resistance optimizing power efficiency. Enhancement mode channel enabling precise switching control.
High power dissipation enables heavy-duty operation. Wide thermal operating range for reliability. Built-in protection with gate voltage limits. Standardized TO-220 packaging for ease of mounting. Compact physical dimensions for space-efficient design.
Ideal for industrial, commercial, and automotive integrated circuits. Explore onsemi MOSFETs on EnvMart for diverse industrial semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 47 amperes.
This unit supports a maximum drain-source voltage of 60 volts.
It has a low on-resistance of 26 milliohms, which helps reduce power losses.
The typical gate charge is 84 nanocoulombs at gate-source voltage.
It operates within a temperature range of -55°C to 175°C.
The maximum power dissipation capacity is 160 watts.
This model supports through-hole mounting for reliable connections.
It has a 3-pin layout for simplified circuit integration.
It is suitable for applications such as power supplies, plasma display panels, and lighting ballasts.
The maximum gate-source voltage ratings are -25 volts to +25 volts.
This model features a P-channel type for enhancement mode operation.
The country of origin for this MOSFET is India.
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