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onsemi UniFET N-Channel MOSFET 51 A, 250 V, TO-220 Package, Enhancement Mode FDP51N25
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.67mm |
| Model | FDP51N25 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 51A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 320W |
| Typical Gate Charge Qg @ Vgs | 55nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Features enhancement mode channel operation with very low on-state resistance.
- Maximum power dissipation up to 320 W ensures efficient handling of high loads.
- Ideal for power conversion, switching applications, and electronic ballast circuits.
- Three-pin through-hole package assures reliable mounting and easy integration.
- Operates effectively between -55°C and 150°C.
- Equipped with an internal gate-source ESD diode to protect against surge stresses.
- Compact dimensions of 10.67 mm length, 9.4 mm height, and 4.83 mm width optimize board space.
- Bidirectional gate-source voltage tolerance of -30 V to +30 V enhances durability.
Product Description
onsemi FDP51N25 is a high-performance UniFET N-Channel MOSFET with a maximum continuous drain current of 51 A and a maximum drain-source voltage rating of 250 V, housed in a TO-220 package.
This enhancement mode MOSFET features one of the smallest on-resistance values in its class, delivering superior switching performance and high avalanche energy strength, which makes it well suited for rigorous applications.
The device's internal gate-source ESD diode provides excellent surge protection, supporting over 2000 V in human body model surge stress, thereby enhancing reliability and longevity.
Its thermal operating range from -55°C to 150°C allows deployment in harsh environmental conditions, making it suitable for industrial and commercial power electronics systems.
Typical applications include switching power converters, power factor correction (PFC) circuits, flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts.
The through-hole mounted TO-220 package supports ease of assembly and efficient heat dissipation, accommodating a maximum power dissipation of 320 W. Features enhancement mode channel operation with low on-state resistance.
Compact dimensions and three-pin configuration for efficient layout design. High voltage and current ratings suitable for demanding power electronics. Reliable surge protection with internal ESD gate diode. Wide operating temperature range for versatility.
These specifications and features make the onsemi FDP51N25 an excellent choice for designers requiring robustness and efficiency in semiconductor device power stages within industrial, laboratory, manufacturing, and electronic equipment sectors.
Explore the Electronics & Electricals category at EnvMart for more semiconductor solutions from leading brands like onsemi.
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Frequently Asked Questions
The maximum continuous drain current for this model is 51 A.
The maximum drain-source voltage rating is 250 V.
It can handle a maximum power dissipation of 320 W.
The maximum drain-source resistance is 60 mΩ.
The operating temperature range is from -55°C to 150°C.
It is housed in a TO-220 package, which supports through-hole mounting.
The typical gate charge is 55 nC at Vgs.
The dimensions are 10.67 mm in length, 9.4 mm in height, and 4.83 mm in width.
Typical applications include switching power converters, power factor correction circuits, and electronic lamp ballasts.
It features an enhancement mode N-channel operation.
The maximum gate-source voltage tolerance is -30 V to +30 V.
The country of origin for this model is India.
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