onsemi QFET Type P-Channel MOSFET, 1 A, 100 V Enhancement Mode, 4-Pin SOT-223 Package FQT5P10TF

onsemi FQT5P10TF is a QFET® P-Channel MOSFET designed with advanced planar technology to deliver excellent performance in power management and switching applications. With a maximum continuous drain current of 1 A and a drain-source voltage rating of 100 V, it fits well in a variety of industrial, electronics manufacturing, and consumer electronic applications.

This device’s surface mount 4-pin SOT-223 package facilitates easy integration into compact circuit designs requiring efficient power control. The enhancement mode channel type ensures that the MOSFET remains off at zero gate voltage and only conducts when driven positively, allowing precision control.

Key parameters include a low maximum drain-source resistance (Rds) of 1.05 ohms which reduces conduction losses, and a typical gate charge of 6.3 nC that minimizes switching losses to enhance efficiency. Its maximum power dissipation is 2 W, and it is built to withstand operating temperatures from -55°C up to 150°C, making it suitable for robust industrial environments.

This MOSFET finds use in power supplies, power factor correction circuits, DC-DC converters, plasma display panels, lighting ballasts, and motion control systems. It offers reduced switching and conduction losses compared to competing planar MOSFETs, thanks to onsemi's proprietary QFET® technology.

The package is a compact 4-pin SOT-223, dimensions approximately 6.5 mm x 3.56 mm x 1.6 mm. Voltage ratings ensure reliable operation at up to 100 volts. Current handling of 1 amp allows use in low power electronic circuits.

Temperature range supports high-reliability applications in demanding environments. Channel type and mode contribute to its suitability for energy-efficient electronic switch design. Choose the onsemi FQT5P10TF MOSFET for advanced semiconductor requirements in power electronics, industrial automation, and electronic component manufacturing sectors.