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| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 2.3mm |
| Length | 6.6mm |
| Model | FQD13N10LTM |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 8.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
onsemi FQD13N10LTM is a QFET N-Channel MOSFET designed for efficient switching and power management in industrial and electronic applications. It supports a continuous drain current of 10 amperes and withstands a maximum drain-source voltage of 100 volts, suitable for a variety of power electronics circuits.
This device features a robust surface mount TO-252 package with 3 pins, enabling ease of assembly and reliable electrical connections. The planar MOSFET design yields a low on-resistance of 180 milliohms, enhancing conduction efficiency and reducing heat generation during operation.
It possesses a maximum power dissipation rating of 2.5 watts and typical gate charge of 8.7 nanocoulombs, helping lower switching losses and improving overall device performance. The MOSFET operates reliably across a wide temperature spectrum from -55°C up to 150°C, making it suitable for harsh industrial environments.
Physical dimensions of the component measure 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height, supporting compact device layouts and optimized space usage on printed circuit boards.
The FQD13N10LTM is produced under stringent manufacturing standards in Malaysia, ensuring consistent quality and durability. It finds applications in power supplies, power factor correction circuits, DC-DC converters, lighting ballasts, motor controls, and other industrial and commercial electronic systems requiring efficient high-speed switching.
Offers low on-resistance of 180 milliohms for efficient conduction. Supports maximum power dissipation of 2.5 watts for high reliability. Typical gate charge is 8.7 nanocoulombs reducing switching losses. Operates within temperature range from -55°C to 150°C for wide application environments.
Manufactured in Malaysia guaranteeing quality and standards compliance. Designed with enhancement mode channel for superior switching performance. Compact dimensions: length 6.6 mm, width 6.1 mm, height 2.3 mm simplifying PCB layout.
Peak forward voltage rating of 1.5 V minimizes power losses in operation. Explore more on semiconductor and MOSFET products from onsemi and other brands in EnvMart.
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