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onsemi QFET N-Channel MOSFET 10 A 100 V Enhancement Mode Surface Mount 3-Pin TO-252 FQD13N10LTM

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin Malaysia
Brand onsemi
Height 2.3mm
Length 6.6mm
Model FQD13N10LTM
Width 6.1mm
Mount Type Surface
Series QFET
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 180mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 8.7nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • Offers low on-resistance of 180 milliohms for efficient conduction.
  • Supports maximum power dissipation of 2.5 watts for high reliability.
  • Typical gate charge is 8.7 nanocoulombs reducing switching losses.
  • Operates within temperature range from -55°C to 150°C for wide application environments.
  • Manufactured in Malaysia guaranteeing quality and standards compliance.
  • Designed with enhancement mode channel for superior switching performance.
  • Peak forward voltage rating of 1.5 V minimizes power losses in operation.

Product Description

onsemi FQD13N10LTM is a QFET N-Channel MOSFET designed for efficient switching and power management in industrial and electronic applications. It supports a continuous drain current of 10 amperes and withstands a maximum drain-source voltage of 100 volts, suitable for a variety of power electronics circuits.

This device features a robust surface mount TO-252 package with 3 pins, enabling ease of assembly and reliable electrical connections. The planar MOSFET design yields a low on-resistance of 180 milliohms, enhancing conduction efficiency and reducing heat generation during operation.

It possesses a maximum power dissipation rating of 2.5 watts and typical gate charge of 8.7 nanocoulombs, helping lower switching losses and improving overall device performance. The MOSFET operates reliably across a wide temperature spectrum from -55°C up to 150°C, making it suitable for harsh industrial environments.

Physical dimensions of the component measure 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height, supporting compact device layouts and optimized space usage on printed circuit boards.

The FQD13N10LTM is produced under stringent manufacturing standards in Malaysia, ensuring consistent quality and durability. It finds applications in power supplies, power factor correction circuits, DC-DC converters, lighting ballasts, motor controls, and other industrial and commercial electronic systems requiring efficient high-speed switching.

Offers low on-resistance of 180 milliohms for efficient conduction. Supports maximum power dissipation of 2.5 watts for high reliability. Typical gate charge is 8.7 nanocoulombs reducing switching losses. Operates within temperature range from -55°C to 150°C for wide application environments.

Manufactured in Malaysia guaranteeing quality and standards compliance. Designed with enhancement mode channel for superior switching performance. Compact dimensions: length 6.6 mm, width 6.1 mm, height 2.3 mm simplifying PCB layout.

Peak forward voltage rating of 1.5 V minimizes power losses in operation. Explore more on semiconductor and MOSFET products from onsemi and other brands in EnvMart.

onsemi QFET N-Channel MOSFET 10 A 100 V Enhancement Mode Surface Mount 3-Pin TO-252 FQD13N10LTM
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 amperes.

This MOSFET can withstand a maximum drain-source voltage of 100 volts.

The dimensions of this unit are 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height.

The typical gate charge for the FQD13N10LTM is 8.7 nanocoulombs.

This MOSFET supports a maximum power dissipation of 2.5 watts.

It features a low on-resistance of 180 milliohms.

The operating temperature range for this model is from -55°C to 150°C.

This unit is packaged in a TO-252 surface mount format with 3 pins.

The peak forward voltage rating of this model is 1.5 volts.

It is an N-channel MOSFET designed for enhancement mode operation.

This MOSFET is manufactured in Malaysia, ensuring compliance with quality standards.

It is suitable for applications such as power supplies, DC-DC converters, and motor controls.

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