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onsemi QFET Type P-Channel MOSFET, 9.4 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement Mode FQD11P06TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.3mm |
| Length | 6.6mm |
| Model | FQD11P06TM |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 185mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -4V |
Key Features
- This MOSFET operates in enhancement mode ensuring voltage-controlled switching.
- High-density DMOS technology offers low on-state resistance for efficient performance.
- The device features a maximum power dissipation of 2.5 W and a gate charge of 13 nC at Vgs.
- Operating temperature range spans from -55°C to a maximum of 150°C, suitable for demanding environments.
- Applications include load switching, DC/DC converters, battery protection, and DC motor control.
- Compact dimensions with width of 6.1 mm, height of 2.3 mm, and length of 6.6 mm facilitate space-saving PCB designs.
Product Description
onsemi FQD11P06TM is a QFET Type P-Channel MOSFET designed for high-performance electronic switching applications. This enhancement mode MOSFET is fabricated using onsemi's proprietary high cell density DMOS technology, delivering rugged and reliable fast switching capabilities with low on-state resistance.
Featuring a maximum continuous drain current of 9.4 A and a drain-source voltage rating of 60 V, it supports robust operation in power management circuits. The device comes in a compact 3-pin TO-252 surface-mount package measuring 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height, enabling efficient board layout and thermal management.
The MOSFET has a typical gate charge of 13 nC at the gate-source voltage, facilitating low switching losses. It operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronics applications.
Main applications include load switching for power control, DC to DC converters, battery protection circuits, and DC motor drive controls. It is engineered to provide superior switching performance and ruggedness through its DMOS technology.
This MOSFET operates with voltage-controlled switching ensuring high efficiency. High-density cell design minimizes on-state resistance for optimized power performance. Robust operating temperature range supports use in harsh environments.
Compact TO-252 surface-mount package benefits space-constrained designs. Recommended for load switching, power management, and motor control applications. Explore the Electronics & Electricals catalog at EnvMart for a wide range of semiconductors including MOSFETs from leading manufacturers.
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Frequently Asked Questions
The maximum continuous drain current for the FQD11P06TM is 9.4 A.
This model has a maximum drain-source voltage rating of 60 V.
The typical gate charge at gate-source voltage (Vgs) is 13 nC.
The TO-252 package measures 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height.
It operates within a temperature range of -55°C to 150°C.
The maximum power dissipation is rated at 2.5 W.
This model features a Type P channel.
The mount type for this MOSFET is surface mount (TO-252).
It is suitable for applications such as load switching, DC/DC converters, battery protection, and DC motor control.
The maximum gate-source voltage (Vgs) is rated at -30V to +30V.
The maximum drain-source resistance (Rds) is 185 mΩ.
This model belongs to the QFET series.
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