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onsemi PowerTrench N-Channel MOSFET 900mA 20V Enhancement 3-Pin SOT-23 FDV305N

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 930μm
Length 2.92mm
Model FDV305N
Width 1.3mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 900mA
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 220mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 350mW
Typical Gate Charge Qg @ Vgs 1.1nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 750mV

Key Features

  • Designed for efficient switching and amplification applications.
  • Surface mount type with PowerTrench technology for improved thermal performance.
  • Low maximum drain-source resistance of 220 mΩ ensuring low conduction losses.
  • Operates within a wide temperature range from -55°C to 150°C.
  • Typical gate charge is 1.1 nC, enabling fast switching speeds.
  • Maximum gate-source voltage ranges ±12V protecting gate integrity.
  • Maximum power dissipation of 350mW for reliable operation.
  • Channel type is N and channel mode is enhancement for standard MOSFET operation.

Product Description

onsemi FDV305N is a PowerTrench® N-Channel MOSFET designed for electronic applications requiring efficient switching and amplification, supporting a maximum continuous drain current of 900 mA and a drain-source voltage of 20 V. Its surface mount SOT-23 package with 3 pins facilitates compact integration on PCB assemblies.

This MOSFET features a low maximum drain-source resistance of 220 mΩ, which minimizes conduction losses and improves overall efficiency in power management circuits. The device operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for various industrial and commercial electronics environments.

With a typical gate charge of 1.1 nC, the FDV305N enables fast switching speeds, ideal for high-frequency applications. The maximum gate-source voltage rating of ±12 V protects the device from voltage spikes, ensuring long-term durability.

Additional characteristics include a maximum power dissipation of 350 mW and a forward voltage of 750 mV, balancing power handling and efficiency. The compact dimensions of 2.92 mm length, 1.3 mm width, and 930 μm height allow for space-efficient designs.

Applications for the onsemi FDV305N N-Channel MOSFET span across industrial electronics, power supplies, electronic control units, consumer electronics, and other domains requiring reliable semiconductor switching components.

Designed for efficient switching and amplification applications. Surface mount PowerTrench technology for improved thermal management. Low Rds(on) of 220 mΩ reduces conduction losses. Wide operating temperature range from -55°C to 150°C.

Fast switching enabled by low gate charge of 1.1 nC. Gate voltage tolerance of ±12 V safeguards performance. Maximum power dissipation rated at 350 mW. Compact SOT-23 3-pin package for PCB mounting. Suitable for industrial, commercial, automotive, and consumer electronics.

Reliable semiconductor switching for power management and control circuits. Explore the Electronics & Electricals category for compatible components and related MOSFET devices at EnvMart.

onsemi PowerTrench N-Channel MOSFET 900mA 20V Enhancement 3-Pin SOT-23 FDV305N
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Frequently Asked Questions

The maximum continuous drain current for this model is 900 mA.

The maximum drain-source voltage rating is 20 V.

This model comes in a SOT-23 package type with 3 pins.

The maximum power dissipation is rated at 350 mW.

The typical gate charge is 1.1 nC, enabling fast switching speeds.

It operates within a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage is ±12 V, which protects the gate integrity.

The dimensions are 2.92 mm in length, 1.3 mm in width, and 930 μm in height.

The maximum drain-source resistance is 220 mΩ, ensuring low conduction losses.

This model is an N-channel MOSFET with enhancement mode operation.

It is suitable for industrial electronics, power supplies, electronic control units, and consumer electronics.

This MOSFET belongs to the PowerTrench series, designed for efficient switching and amplification applications.

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