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onsemi PowerTrench Type P-Channel MOSFET, 8.2 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin SOIC FDS4685
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS4685 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.2A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 27mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The device features a low maximum drain-source resistance of 27 mΩ for reduced conduction losses.
- It operates in enhancement mode with a maximum power dissipation of 2.5 W.
- Typical gate charge is only 19 nC at Vgs, enabling fast switching performance.
- The MOSFET complies with surface mount technology using an SOIC package.
- Operating temperature range spans from -55°C to a maximum of 150°C, suitable for industrial use.
- Maximum gate-source voltage ratings are ±20 V, supporting robust gate drive options.
- Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height ensure easy PCB integration.
Product Description
onsemi FDS4685 PowerTrench Type P-Channel MOSFET is a high-performance semiconductor device designed for efficient power switching in electronic circuits. With a continuous drain current rating of 8.2 A and a maximum drain-source voltage of 40 V, this MOSFET supports a wide range of applications in power management and switching.
The PowerTrench technology integrates a shielded-gate structure that improves charge balance and minimizes the figure of merit (FOM) for superior switching efficiency. Its low on-resistance (27 mΩ max) reduces conduction losses, making it ideal for synchronous rectification in AC/DC power supplies and other power conversion systems.
The device is housed in an 8-pin SOIC surface-mount package with compact dimensions (5 mm × 4 mm × 1.5 mm), allowing for space-saving PCB designs. The enhancement mode channel with a gate charge of 19 nC facilitates fast switching and low power dissipation (2.5 W max).
Designed to operate reliably across wide temperatures from -55°C to 150°C, this MOSFET suits industrial, automotive (non-automotive standard), and commercial applications where stable and efficient power handling is essential. The maximum gate-source voltage tolerance of ±20 V expands its compatibility with various gate driver circuits.
Key features such as the soft reverse recovery body diode aid in eliminating the need for snubber circuits and enable replacement of higher voltage MOSFETs, improving system efficiency and simplifying design.
The device’s advanced PowerTrench technology delivers excellent switching speed and efficiency. Its compact small-outline integrated circuit (SOIC) package supports surface mount assembly. Operating temperature range from -55°C up to 150°C ensures broad application scope.
Maximum drain-source voltage of 40 V and continuous drain current of 8.2 A suits diverse power applications. Typical gate charge of 19 nC leads to reduced switching losses in high-frequency circuits. Robust gate-source voltage handling at ±20 V adds protection and flexibility in circuit design.
This onsemi MOSFET is perfect for use in power supplies, industrial automation, consumer electronics, and telecommunications equipment. Its efficiency and performance characteristics support both design efficiency and long-term operational reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.2 A.
The maximum drain-source voltage for the FDS4685 is 40 V.
This model has dimensions of 5 mm in length, 4 mm in width, and 1.5 mm in height.
The typical gate charge for the FDS4685 at Vgs is 19 nC.
The maximum power dissipation for this MOSFET is 2.5 W.
The FDS4685 operates within a temperature range of -55°C to 150°C.
This MOSFET is housed in an 8-pin SOIC surface-mount package.
The maximum gate-source voltage rating for the FDS4685 is ±20 V.
The maximum drain-source resistance is 27 mΩ.
This model is suitable for applications in power supplies, industrial automation, consumer electronics, and telecommunications equipment.
The channel mode for this MOSFET is enhancement mode.
The FDS4685 utilizes PowerTrench technology, which enhances switching efficiency and minimizes conduction losses.
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