onsemi PowerTrench N-Channel MOSFET, 8.9A Drain Current, 80V Drain Source Voltage, 8-Pin SOIC, 2.5W Power Dissipation FDS3572

onsemi FDS3572 PowerTrench N-Channel MOSFET is a high-performance semiconductor device designed for surface-mount applications requiring efficient power switching capabilities. Engineered with an enhancement channel mode, it supports a maximum continuous drain current of 8.9 amperes and can tolerate drain source voltages up to 80 volts, making it suitable for various industrial, automotive, and consumer electronic applications.

The MOSFET is housed in a space-saving 8-pin SOIC package, measuring 5 mm in length, 4 mm in width, and 1.5 mm in height. It offers a maximum power dissipation of 2.5 watts, allowing it to manage moderate thermal loads in compact electronic circuits.

This component operates over a wide temperature range from -55°C to 150°C, ensuring reliability in harsh environments, including HVAC systems, manufacturing controls, and power management modules. Its low on-resistance of 16 milliohms minimizes conduction losses, optimizing efficiency in switching tasks.

The typical gate charge of 31 nanocoulombs at the gate-source voltage Vgs facilitates fast switching speeds, while the allowable maximum gate-source voltage of ±20 volts ensures robust device protection during operation. These electrical characteristics make the FDS3572 an ideal choice for switching regulators, DC-DC converters, and load switch applications.

This MOSFET features an enhancement channel mode optimized for efficient switching performance. It supports a maximum power dissipation of 2.5 watts to handle moderate thermal loads. The device operates reliably over a wide temperature range from -55°C minimum to 150°C maximum.

A compact SOIC package with pin count of 8 allows for easy circuit integration. Maximum drain source resistance is low, at 16 milliohms, ensuring minimal conduction losses. Typical gate charge is 31 nanocoulombs at gate-source voltage, enabling fast switching applications.

The maximum gate-source voltage rating is ±20 volts to allow safe gate drive voltages. Physical dimensions include 5mm length, 4mm width, and 1.5mm height.

onsemi's PowerTrench MOSFET series combines advanced semiconductor manufacturing techniques to deliver reliable, efficient, and compact power switching devices. This MOSFET is widely applied across industrial automation, power supplies, telecommunications, and automotive electronics.

Explore the extensive range of onsemi PowerTrench MOSFETs and related semiconductor components in the EnvMart electronics catalog for high-quality, trusted industrial parts.