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onsemi PowerTrench N-Channel MOSFET, 2 A, 20 V, Enhancement Mode, 3-Pin SOT-23 FDN327N
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN327N |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 4.5nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 1.2V |
Key Features
- Compact SOT-23 package with 3 pins for surface mounting applications.
- Maximum drain current of 2 amperes supports moderate power switching loads.
- Drain-source voltage rating of 20 volts suitable for low voltage power circuits.
- Enhancement mode N-channel MOSFET technology for efficient switching.
- Low drain-source resistance of 70 milliohms minimizes conduction losses.
- Maximum power dissipation of 500 milliwatts enables reliable thermal operation.
- Wide operating temperature range from -55°C to 150°C for robust performance.
- Typical gate charge of 4.5 nanocoulombs at 4.5 volts gate drive ensures fast switching.
Product Description
onsemi FDN327N is a PowerTrench® N-Channel MOSFET packaged in a compact 3-pin SOT-23 surface mount form factor. It offers a maximum continuous drain current of 2 A and a drain-source voltage of 20 V, making it ideal for low-voltage power switching applications in electronics, power management, and signal switching circuits.
This enhancement mode MOSFET features a low on-resistance of 70 milliohms, helping to reduce conduction losses and improve efficiency in compact power designs. Its maximum power dissipation rating is 500 milliwatts allowing stable operation within the temperature range of -55°C to 150°C, suitable for industrial and commercial electronics environments.
The gate charge of 4.5 nC at a gate drive voltage of 4.5 V supports fast switching speeds required in high-frequency circuits, while the maximum gate-source voltage tolerance of -8 V to +8 V adds protection against voltage spikes.
The device dimensions are precisely 2.92 mm in length, 1.4 mm in width, and 940 micrometers in height, fitting standard surface mount PCB footprints. It does not conform to automotive standards and lacks additional certifications.
Compact 3-pin SOT-23 surface mount package. 2 A continuous drain current rating for moderate load applications. 20 V maximum drain-source voltage for low voltage power circuits. Low Rds(on) at 70 milliohms for efficient conduction.
500 milliwatt power dissipation supports thermal reliability. Wide ambient temperature operating capability from -55°C to 150°C. Fast switching enabled by typical 4.5 nC gate charge. Robust gate voltage range of -8 to +8 volts protects gate integrity.
Physical dimensions suitable for compact electronic assemblies.
This PowerTrench® N-Channel MOSFET is extensively used in industrial, consumer electronic, and power management applications requiring efficient low-voltage switching components. It is well suited for circuit designs involving DC-DC converters, load drivers, and motor control interfaces.
Explore similar onsemi semiconductor components and power MOSFETs to optimize your electronic circuit design within the EnvMart catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2 A.
The drain-source voltage rating is 20 V, suitable for low voltage power circuits.
The typical gate charge is 4.5 nanocoulombs at a gate drive voltage of 4.5 V.
The low drain-source resistance (Rds(on)) is 70 milliohms, which helps minimize conduction losses.
The maximum power dissipation for this MOSFET is 500 milliwatts.
The dimensions are 2.92 mm in length, 1.4 mm in width, and 940 micrometers in height.
The operating temperature range is from -55°C to 150°C.
This model uses a surface mount type in a compact SOT-23 package.
It is suitable for low-voltage power switching applications, including DC-DC converters and load drivers.
The maximum gate-source voltage tolerance is from -8 V to +8 V, providing protection against voltage spikes.
The FDN327N is an N-channel enhancement mode MOSFET.
The country of origin for the FDN327N is India.
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