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onsemi PowerTrench Type P-Channel MOSFET 1.25A 60V Enhancement 3-Pin SOT-23 FDN5618P

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onsemi PowerTrench Type P-Channel MOSFET 1.25A 60V Enhancement 3-Pin SOT-23 FDN5618P

Name: onsemi PowerTrench Type P-Channel MOSFET 1.25A 60V Enhancement 3-Pin SOT-23 FDN5618P
Brand: onsemi
SKU: 347499
Price: 0.26 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	940μm
Length	2.92mm
Model	FDN5618P
Width	1.4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	1.25A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	170mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	8.6nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

This MOSFET features a maximum continuous drain current of 1.25 A and a maximum drain source voltage of 60 V.
It is housed in a compact 3-pin SOT-23 package designed for surface mount applications.
PowerTrench technology provides enhanced efficiency with an enhancement mode channel and low gate charge of 8.6 nC.
The device supports a maximum power dissipation of 500 mW and a gate-source voltage range of -20 to +20 V.
Operating temperatures range from -55°C to 150°C, suitable for diverse industrial environments.
Typical drain-source resistance is 170 mΩ for efficient conduction.
Compact dimension of 2.92 mm length, 1.4 mm width, and 940 μm height fits space-constrained circuits.
Soft reverse recovery body diode enables fast switching and reduces power loss.

Product Description

onsemi FDN5618P PowerTrench Type P-Channel MOSFET is designed with advanced PowerTrench technology offering enhanced system efficiency and high power density. It is a 3-pin SOT-23 surface mount device engineered for discrete semiconductor applications where reliable low voltage switching is required.

The MOSFET supports a maximum continuous drain current of 1.25 A and a maximum drain-source voltage of 60 V, making it suitable for various power switching and amplification roles in industrial electronics.

This device features an enhancement mode channel with a maximum drain-source resistance of 170 mΩ, delivering efficient electrical conduction with minimal loss. The low typical gate charge of 8.6 nC and soft body diode design ensure rapid switching cycles and reduced power dissipation, thus increasing the operational life span of system components.

With a power dissipation rating of 500 mW and a wide operating temperature range from -55°C to +150°C, it is appropriate for demanding industrial, automotive, laboratory, and power management environments.

The compact physical size of just 2.92 mm in length, 1.4 mm in width, and 940 μm in height makes the FDN5618P ideal for applications with stringent space requirements, such as embedded systems and portable devices.

Common industrial use includes AC/DC power supplies, synchronous rectification circuits, and electronic switching modules in manufacturing and automation sectors. The product lacks specific certifications but meets general industry standards for quality and performance.

This MOSFET minimizes system inefficiencies by combining low gate charge with soft reverse recovery of the body diode. The shielded-gate structure improves charge balance and reduces switching losses. Its robust temperature range ensures stable functioning in harsh industrial and automotive settings.

Easy-to-mount SOT-23 package facilitates automated assembly processes. Optimized for power density to help reduce overall system size. Explore more onsemi semiconductor solutions and MOSFET products at EnvMart for your industrial, electronic, and power management needs.