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onsemi SuperFET N-Channel MOSFET 11 A 600 V Enhancement Mode 3-Pin TO-263 FCB11N60TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FCB11N60TM |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | SuperFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 380mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
| onsemi SuperFET N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-263Brand | onsemi |
Key Features
- Features SuperFET technology for enhanced performance.
- Operates with a maximum continuous drain current of 11 A.
- Provides a maximum drain-source voltage rating of 600 V.
- Low maximum drain-source resistance of 380 milliohms for higher efficiency.
- Supports enhancement mode channel operation with a gate charge of 40 nanocoulombs.
- Maximum operating temperature can reach up to 150 degrees Celsius.
- Compact TO-263 surface mount package with 3 pins facilitates easy PCB integration.
- Designed for robust power applications such as AC-DC switch mode power supplies and industrial systems.
Product Description
onsemi FCB11N60TM is a N-Channel MOSFET transistor housed in a 3-pin TO-263 surface mount package. It operates at a maximum continuous drain current of 11 A and a drain-source voltage rating of 600 V. This enhancement mode MOSFET features the advanced SuperFET technology, which provides superior efficiency and robust body diode performance.
The device supports a typical gate charge (Qg) of 40 nC at Vgs and withstands gate-source voltages ranging from -30 V to +30 V. Its maximum power dissipation is rated at 125 Watts, and it can operate reliably within a temperature range from -55°C to 150°C. The physical dimensions are compact: length 10.67 mm, width 9.65 mm, and height 4.83 mm.
Applications include high power density and efficient switching in AC-DC switch mode power supplies (SMPS), servers, telecom equipment, computing devices, industrial power supply units, uninterruptible power supplies (UPS), solar inverters, and lighting applications.
This MOSFET is designed with advanced charge balance technology to enable more cost-effective and reliable solutions requiring less board space. It is ideal for users seeking high performance and system reliability in demanding electrical environments.
Features SuperFET technology for enhanced efficiency and performance. Supports a maximum continuous drain current of 11 A suitable for robust power switching. Rated for 600 V maximum drain-source voltage for high voltage applications.
Low on-resistance (Rds) of 380 mΩ reduces power loss and heat generation. Compact TO-263 package aids easy surface mounting and board integration. Explore a wide range of semiconductor components including MOSFETs at EnvMart for industrial, manufacturing, and commercial electronics applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 11 A.
It has a maximum drain-source voltage rating of 600 V.
The typical gate charge for this model is 40 nanocoulombs (nC) at Vgs.
The maximum operating temperature can reach up to 150 degrees Celsius.
The dimensions of this unit are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
This model is housed in a 3-pin TO-263 surface mount package.
The maximum power dissipation for this MOSFET is rated at 125 Watts.
It features a maximum drain-source resistance of 380 milliohms.
The minimum operating temperature for this model is -55 degrees Celsius.
This MOSFET is suitable for applications such as AC-DC switch mode power supplies, industrial power supply units, and solar inverters.
It can withstand gate-source voltages ranging from -30 V to +30 V.
This model utilizes an N-channel enhancement mode configuration.
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