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DiodesZetex PNP Bipolar Transistor 3W Power Dissipation, -5.5 A Collector Current, -30 V Collector Emitter Voltage FZT949TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model FZT949TA
Width 7.1mm
Mount Type Surface
Series FZT949
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 75
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 3W
Maximum DC Collector Current Idc -5.5A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of -5.5 A for reliable performance.
  • Collector emitter voltage rating up to -30 V ensures wide application use.
  • Surface mount package type SOT-223 with 4 pins for easy PCB integration.
  • Collector base voltage maximum of 50 V for robust switching applications.
  • Power dissipation capacity of 3 W for effective thermal management.
  • PNP transistor polarity suitable for various analog and switching circuits.
  • High DC current gain (hFE) minimum of 75 for amplification efficiency.
  • Operating temperature range from -55°C to 150°C supports harsh environment usage.

Product Description

DiodesZetex FZT949TA is a high-performance general-purpose PNP bipolar transistor designed for discrete semiconductor applications. It features a maximum DC collector current of -5.5 A and a collector emitter voltage rating of -30 V, allowing it to handle moderate power loads efficiently.

Its surface mount SOT-223 package with 4 pins provides compactness and ease of installation on printed circuit boards. The transistor delivers a maximum power dissipation of 3 W, making it suitable for moderate power applications while maintaining good thermal management.

This device operates reliably within a temperature range of -55°C to 150°C, ensuring consistent performance in demanding industrial, automotive, and electronic environments. The minimum DC current gain (hFE) of 75 enables effective amplification, making it applicable for amplification and switching circuits.

With a maximum transition frequency of 100 MHz, the FZT949TA transistor supports high-speed switching operations in automotive and industrial electronics. It meets the rigorous automotive standard AEC-Q101, demonstrating its suitability for automotive-grade applications.

The transistor's robust voltage capabilities include a maximum collector base voltage of 50 V and a maximum emitter base voltage of 6 V, contributing to reliable operation under varying electrical conditions. Package dimensions of approximately 6.55 mm length, 7.1 mm width, and 1.65 mm height accommodate space-constrained designs.

Maximum DC collector current: -5.5 A. Maximum collector emitter voltage: -30 V. Surface mount SOT-223 package with 4 pins. Maximum power dissipation: 3 W. PNP transistor polarity. Minimum DC current gain: 75. Operating temperature range: -55°C to 150°C.

Maximum transition frequency: 100 MHz. Complies with automotive standard AEC-Q101.

This transistor is widely used in industrial, automotive, power management, and electronic circuit applications for amplification and switching tasks. It offers a balanced combination of voltage, current, and frequency characteristics ensuring versatility and reliability.

Explore more semiconductor components and Bipolar Transistors in EnvMart for professional-grade electronics design and manufacturing.

DiodesZetex PNP Bipolar Transistor 3W Power Dissipation, -5.5 A Collector Current, -30 V Collector Emitter Voltage FZT949TA
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Frequently Asked Questions

The maximum DC collector current for this transistor is -5.5 A.

The collector-emitter voltage rating is up to -30 V.

It comes in a surface mount SOT-223 package with 4 pins.

The maximum power dissipation capacity is 3 W.

The operating temperature range is from -55°C to 150°C.

The minimum DC current gain (hFE) is 75.

The maximum transition frequency is 100 MHz.

It complies with the automotive standard AEC-Q101.

The maximum collector-base voltage is 50 V.

The dimensions are approximately 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height.

This transistor is suitable for industrial, automotive, power management, and electronic circuit applications for amplification and switching tasks.

The maximum emitter-base voltage is 6 V.

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