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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Model | ZTX851 |
| Mount Type | Through Hole |
| Series | ZTX |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 150V |
| Maximum Power Dissipation Pd | 1.2W |
| Maximum DC Collector Current Idc | 5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 130MHz |
| Diodes Inc APT13003LZTR-G1 NPN Transistor, 800 mA, 700 V, 3-Pin TO-92Brand | DiodesZetex |
DiodesZetex ZTX851 is a general purpose NPN bipolar junction transistor designed for a variety of electronic switching and amplification applications. It supports a maximum DC collector current of 5 Amperes and a maximum collector emitter voltage rating of 60 Volts, making it suitable for moderate power tasks in electronic circuits.
Housed in a compact 3-pin TO-92 package, the ZTX851 transistor is intended for through-hole mounting, simplifying its use in prototyping and production assemblies. This transistor features a high transition frequency of 130 MHz, allowing it to switch rapidly with minimal signal distortion.
The device withstands operating temperatures ranging from -55°C up to 150°C, ensuring reliable performance under diverse environmental conditions. Its maximum power dissipation is rated at 1.2 Watts, providing adequate thermal management for supported load currents.
The transistor design includes key voltage ratings such as a collector-base voltage of 150 V and an emitter-base voltage of 6 V, with a minimum DC current gain (hFE) of 100. These characteristics allow it to deliver efficient amplification and switching capabilities in electronic applications.
The ZTX851 complies with RoHS environmental standards, ensuring it meets current regulations for hazardous substance restrictions in electronic components. Designed for general purpose transistor applications. Maximum DC collector current of 5 Amperes supports high power loads.
Collector emitter voltage rating up to 60 Volts for reliable switching. Compact 3-pin TO-92 package suitable for through-hole mounting. High transition frequency of 130 MHz for fast switching performance. Transistor polarity is NPN for standard bipolar junction transistor circuits.
Maximum power dissipation of 1.2 Watts ensures thermal stability. Operates within temperature range of -55°C to 150°C for extended reliability. Meets RoHS standards for environmental compliance. Pin count is 3 for simple integration in electronic assemblies.
This transistor is ideal for industrial, manufacturing, electronics repair, and educational lab use where reliable switching and amplification are required. It can be used in power control circuits, signal amplification stages, and other discrete semiconductor applications.
Explore more semiconductor components and transistors in the Electronics & Electricals category at EnvMart for diverse electronic design needs.
Explore more products in our Bipolar Transistor category.
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