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DiodesZetex Full Bridge 4 Type N and Type P-Channel Power MOSFET 1.8 A 60 V Enhancement Mode, Surface Mount ZXMHC6A07T8TA
Specifications
| Country of Origin | Germany |
|---|---|
| Brand | DiodesZetex |
| Height | 1.6mm |
| Length | 6.7mm |
| Model | ZXMHC6A07T8TA |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0 |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 1.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 425mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 3.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.85V |
| Transistor Configuration | Full Bridge |
Key Features
- This MOSFET features enhancement mode operation suitable for switching applications.
- It has a maximum power dissipation of 1.7 W ensuring reliable performance.
- The device includes 8 pins and adopts a surface mount type package.
- The maximum drain-source resistance is 425 milliohms, allowing efficient conduction.
- It operates within a temperature range from -55°C to +150°C.
- Typical gate charge at Vgs is 3.2 nanocoulombs, ensuring swift switching.
- The transistor configuration is a full bridge with 4 elements per chip.
- Standards and approvals include J-STD-020, RoHS, AEC-Q101, MIL-STD-202, and UL 94V-0.
Product Description
DiodesZetex ZXMHC6A07T8TA is a full bridge power MOSFET featuring four N-channel and P-channel enhancement mode transistors with a maximum continuous drain current of 1.8 A and drain-source voltage of 60 V. This device is designed for surface mount applications with an 8-pin package, making it suitable for compact electronic circuit designs.
The MOSFET offers efficient electrical performance with a maximum drain-source resistance of 425 milliohms and a typical gate charge of 3.2 nC at specified gate voltage, supporting fast switching operations. It supports operation in harsh environments with a temperature range from -55°C to +150°C, making it reliable for industrial, automotive, and commercial electronics applications.
This component meets rigorous standards including J-STD-020 for moisture sensitivity, RoHS compliance for hazardous substances, AEC-Q101 for automotive qualification, MIL-STD-202 military environmental testing, and UL 94V-0 for flammability classification, ensuring high quality and durability.
The compact dimensions (6.7 mm length, 3.7 mm width, and 1.6 mm height) facilitate space-saving layouts on PCBs. This power MOSFET is ideal for controlling power in switching power supplies, motor controls, and other semiconductor switch applications in automotive, industrial automation, and power management systems.
This MOSFET features enhancement mode operation suitable for switching applications. It has a maximum power dissipation of 1.7 W ensuring reliable performance. The device includes 8 pins and adopts a surface mount type package.
The maximum drain-source resistance is 425 milliohms, allowing efficient conduction. It operates within a temperature range from -55°C to +150°C. Typical gate charge at Vgs is 3.2 nanocoulombs, ensuring swift switching. The transistor configuration is a full bridge with 4 elements per chip.
The dimensions are compact: length 6.7 mm, width 3.7 mm, height 1.6 mm. Standards and approvals include J-STD-020, RoHS, AEC-Q101, MIL-STD-202, and UL 94V-0. This MOSFET is made in Germany and is in new condition.
This product is categorized under Power MOSFETs for professional electronic and electrical engineering use cases. Explore more semiconductor components and power management devices in the EnvMart catalog for advanced electronics design and manufacturing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.8 A.
This MOSFET can handle a maximum drain-source voltage of 60 V.
The maximum power dissipation for this MOSFET is 1.7 W.
The typical gate charge at Vgs is 3.2 nanocoulombs (nC).
The maximum drain-source resistance is 425 milliohms (mΩ).
The dimensions of this model are 6.7 mm in length, 3.7 mm in width, and 1.6 mm in height.
It operates within a temperature range from -55°C to +150°C.
This device features a full bridge configuration with 4 elements per chip.
This model adopts a surface mount type package.
It meets several standards including J-STD-020, RoHS, AEC-Q101, MIL-STD-202, and UL 94V-0.
This model includes both Type N and Type P-channel transistors.
The maximum gate-source voltage is -20 V to +20 V.
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