DiodesZetex High Voltage 300 mA NPN Bipolar Transistor 400 V 2W Surface Mount SOT-223 FZT458TA

DiodesZetex FZT458TA is a high voltage NPN bipolar transistor designed for applications requiring efficient switching and amplification at voltages up to 400 V and collector currents up to 300 mA. This transistor is housed in a compact surface-mount SOT-223 package, facilitating easy integration into modern PCB layouts where space is constrained.

With a power dissipation rating of 2 W, the FZT458TA transistor can handle moderate power levels with stable performance. Its industrial-grade operating temperature range from -55°C to 150°C makes it suitable for demanding environments such as automotive electronics, industrial controls, and power management circuits.

The transistor features a maximum transition frequency of 50 MHz, enabling high-speed switching operations essential in RF amplifiers and other fast-switching applications. With a minimum DC current gain of 15, it ensures consistent amplification factors for various electronic circuits.

The precise package dimensions of 6.55 mm in length, 7.1 mm in width, and 1.8 mm in height enable designers to plan layouts exactly. Compliant with the automotive-grade AEC-Q101 standard, this transistor assures reliability and long-term durability in automotive and harsh environment applications.

Typical uses include discrete semiconductor circuits, bipolar transistor applications in power management, signal amplification, and switching in both commercial and industrial electronic systems.

Surface mount SOT-223 package suitable for compact PCB layouts. Maximum power dissipation of 2 W ensuring robust operation. Transistor configuration is single NPN type for switching and amplification. Wide operating temperature range from -55°C up to 150°C for industrial applications.

Maximum transition frequency of 50 MHz for high-speed switching. 4-pin package with dimensions 6.55 mm length, 7.1 mm width, and 1.8 mm height. Automotive standard compliant with AEC-Q101 certification for reliability. Collector-base breakdown voltage rated at 400 V enhances voltage tolerance.

Minimum DC current gain (hFE) of 15 for reliable amplification. Emitter-base voltage maximum of 5 V for controlled switching. Discover more semiconductor and transistor products in the Electronics & Electricals category at EnvMart.

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