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ams OSRAM Infrared Phototransistor SIDELED 120° Angle, Surface Mount 2-Pin PLCC Package SFH 325 FA-3-Z
Specifications
| Country of Origin | Malaysia |
|---|---|
| Diameter | 2.4mm |
| Brand | ams OSRAM |
| Dimensions | 4.2 x 4.2 x 3.8 mm |
| Height | 3.8mm |
| Length | 4.2mm |
| Model | SFH 325 FA-3-Z |
| Packaging | Tape & Reel |
| Width | 4.2mm |
| Mount Type | Surface |
| Series | SIDELED |
| Maximum Operating Temperature | 100°C |
| Package Type | PLCC |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS, IEC 62471 2006 |
| Number of Pins | 2 |
| Typical Fall Time | 7μs |
| Peak Wavelength | 980nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 120 ° |
| Collector Current | 15mA |
| Maximum Light Current | 50μA |
| Maximum Dark Current | 50nA |
| Collector Emitter Voltage | 35V |
Key Features
- Detects infrared spectrum with peak wavelength at 980 nm.
- Offers high linearity and fast response with 7μs typical rise and fall times.
- Maximum collector current of 15 mA and maximum light current of 50μA.
- Robust operating temperature range from -40°C to +100°C for versatile applications.
- Compact dimensions of 4.2 x 4.2 x 3.8 mm suitable for surface mount reflow soldering.
- Supplied in tape and reel packaging for efficient automated assembly.
- Complies with RoHS and IEC 62471 2006 standards.
- Designed in SIDELED series package enhancing infrared phototransistor performance.
Product Description
ams OSRAM SFH 325 FA-3-Z is a high-performance infrared phototransistor housed in a SIDELED® surface mount 2-pin PLCC package. It features a wide half sensitivity angle of 120°, making it efficient in detecting infrared light at a peak wavelength of 980 nm. The device exhibits fast switching characteristics with typical rise and fall times of 7 microseconds, suitable for high-speed applications.
The phototransistor supports a maximum collector current of 15 mA and light current up to 50μA, while maintaining a low dark current of 50nA. It is capable of reliable operation across a broad temperature range from -40°C to 100°C, making it adaptable for various industrial and electronic environments.
Compact with dimensions 4.2 x 4.2 x 3.8 mm and designed for surface mount technology, this device is optimized for reflow infrared soldering, ensuring compatibility with modern automated PCB assembly processes. The product comes in tape and reel packaging to support high volume manufacturing efficiency.
Certified with RoHS and IEC 62471 2006 standards, it meets environmental and photobiological safety requirements. The SIDELED series design enhances infrared sensitivity and linearity, enhancing signal quality for optoelectronic sensing tasks.
This phototransistor is ideal for integration in electronic components, optocouplers, and infrared sensing applications in industrial, instrumentation, and automated system markets. It supports applications requiring precise detection of infrared light with robustness and efficiency.
Detects infrared spectrum with peak wavelength at 980 nm. Offers high linearity and fast response with 7μs typical rise and fall times. Maximum collector current of 15 mA and maximum light current of 50μA. Robust operating temperature range from -40°C to +100°C for versatile applications.
Compact dimensions of 4.2 x 4.2 x 3.8 mm suitable for surface mount reflow soldering. Supplied in tape and reel packaging for automated assembly efficiency. Complies with RoHS and IEC 62471 2006 standards. Designed in SIDELED series package enhancing infrared phototransistor performance.
Ideal for electronic components and optoelectronic device integration. Explore more in the Phototransistor category at EnvMart for professional industrial and electronic component solutions.
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Frequently Asked Questions
The peak wavelength of this infrared phototransistor is 980 nm, which makes it suitable for detecting infrared light.
This model features typical rise and fall times of 7 microseconds, allowing for fast response in applications.
The maximum collector current for this phototransistor is 15 mA, which determines its operational capacity in various applications.
It operates reliably within a temperature range of -40°C to 100°C, making it versatile for different environments.
The dimensions of this phototransistor are 4.2 x 4.2 x 3.8 mm, suitable for surface mount applications.
It is supplied in tape and reel packaging, which facilitates efficient automated assembly processes.
This phototransistor complies with RoHS and IEC 62471 2006 standards, ensuring it meets environmental and safety requirements.
This model has 2 pins, designed for surface mount technology.
The angle of half sensitivity for this infrared sensor is 120°, which enhances its detection capabilities.
The maximum light current supported by this model is 50μA, which influences its performance in light detection tasks.
The maximum dark current for this phototransistor is 50nA, which is important for its sensitivity and performance.
This infrared phototransistor uses a surface mount design, which is compatible with modern PCB assembly techniques.
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