ams OSRAM Infrared Phototransistor 50 ° Angle, Through Hole 2-Pin 3 mm (T-1) Package SFH 310 FA

ams OSRAM SFH 310 FA is an infrared phototransistor designed for precise detection of infrared light at a peak wavelength of 890 nm. Encased in a standard 3 mm (T-1) through-hole package, this phototransistor features a 50° angle of half sensitivity, making it ideal for industrial and electronic control applications.

Its fast response with typical rise and fall times of 12 microseconds ensures efficient signal processing in photointerrupter devices and industrial electronics systems. The device supports a maximum collector current of 50 mA and operates reliably within a temperature range of -40°C to 100°C, suitable for demanding environments.

The physical dimensions include a diameter of 3 mm, length of 3.4 mm, width of 6.1 mm, and height of 4.8 mm. Mounting is via two through-hole pins, allowing straightforward integration on printed circuit boards. The phototransistor adheres to ANSI/ESDA/JEDEC JS-001 standards, ensuring electrostatic discharge robustness.

This device uses a clear plastic lens for IR detection with daylight filtering capabilities, supporting applications such as photointerrupters, industrial electronics, and various control and drive circuits. Its collector-emitter voltage rating of 35 V supports robust operation in electronic systems.

Detects infrared light with 890 nm peak wavelength. Fast response with 12 μs typical rise and fall times. Maximum collector current of 50 mA. Operating temperature from -40°C to 100°C. Standard 3 mm (T-1) through-hole package.

Complies with ANSI/ESDA/JEDEC JS-001 standards. Clear plastic lens optimized for infrared sensing. Ideal for industrial electronics and photointerrupter applications.

This ams OSRAM phototransistor offers reliable performance and ease of use for electronics manufacturing and industrial control solutions. Browse further components and devices in the Phototransistor category on EnvMart to enhance your designs and projects.