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| Country of Origin | India |
|---|---|
| Diameter | 3mm |
| Brand | ams OSRAM |
| Height | 4.8mm |
| Length | 3.4mm |
| Model | SFH 310 FA |
| Width | 6.1mm |
| Mount Type | Through Hole |
| Series | SFH 310 FA |
| Maximum Operating Temperature | 100°C |
| Package Type | 3 mm (T-1) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | ANSI/ESDA/JEDEC JS-001 - HBM |
| Number of Pins | 2 |
| Typical Fall Time | 12μs |
| Peak Wavelength | 890nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 50 ° |
| Collector Current | 50mA |
| Maximum Light Current | 3200μA |
| Maximum Dark Current | 50nA |
| Collector Emitter Voltage | 35V |
ams OSRAM SFH 310 FA is a high-quality infrared phototransistor designed in a standard 3 mm (T-1) through-hole package. This device efficiently detects infrared light at a peak wavelength of 890nm, making it ideal for use in a variety of electronic and industrial applications such as photointerrupters and control systems.
The phototransistor offers fast response times with typical rise and fall times of 12μs, allowing precise and timely detection of infrared signals. Its maximum light current capability of 3200μA and minimal maximum dark current of 50nA provide excellent sensitivity and low noise performance.
With a half sensitivity angle of 50 degrees, it captures infrared light over a broad range, enhancing its detection accuracy. The device's robust operating temperature range from -40°C to 100°C ensures stable function in harsh environments.
This component is designed to be mounted via through-hole technology and features a compact 3 mm diameter, 4.8 mm height, and 3.4 mm length package. It can handle a collector emitter voltage of up to 35V and a maximum collector current of 50mA, contributing to its reliability in various circuits.
The SFH 310 FA adheres to the ANSI/ESDA/JEDEC JS-001 - HBM standard, assuring compliance with industry norms for electrostatic discharge protection, thus safeguarding device integrity during handling and assembly.
Detects infrared spectrum light at 890nm peak wavelength. Fast response with 12μs typical rise and fall times. Maximum light current of 3200μA and dark current of 50nA ensures sensitivity. 50° half sensitivity angle for wider detection coverage.
Operates within -40°C to 100°C temperature range suitable for industrial conditions. Compact 3 mm (T-1) package supporting through-hole mounting. Collector emitter voltage rating of 35V and max collector current of 50mA.
ANSI/ESDA/JEDEC JS-001 HBM approved for electrostatic discharge protection.
This phototransistor is ideal for applications in industrial electronics, photointerrupters, and control/drive circuits requiring reliable infrared light detection. It combines precise detection capabilities with rugged performance to meet demanding usage scenarios.
Explore more Phototransistor components and similar products within the electronics components category on EnvMart for comprehensive solutions across industrial and laboratory applications.
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