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Infineon HEXFET N-Channel MOSFET 65A 200V Enhancement Mode 3-Pin TO-247 IRFP4227PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP4227PBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 65A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 25mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.3V |
Key Features
- Operates in enhancement mode ensuring efficient control in high-power electronic circuits.
- Supports a maximum power dissipation of 330W suitable for demanding environments.
- Encapsulated in a 3-pin TO-247 package with through-hole mount type for robust installation.
- Features a low on-resistance Rds(on) of 25mΩ reducing conduction losses.
- Capable of switching at high speeds with a typical gate charge of 70nC.
- Tolerates operating temperatures from -40°C to 175°C for reliability in harsh conditions.
- Designed to handle pulsed drain currents up to 130A making it suitable for transient applications.
- Includes thermal resistance junction-to-case of 0.45°C/W requiring proper heat dissipation.
Product Description
Infineon IRFP4227PBF is a HEXFET N-Channel MOSFET built for high-current and high-voltage industrial electronics applications. With a continuous drain current rating of 65A and a maximum drain-source voltage of 200V, it supports efficient energy conversion and power management in various systems.
This device operates in enhancement mode delivering fast switching capabilities owing to its low typical gate charge of 70nC, which is critical for high-frequency switching power supplies and motor drives. Packaged in a robust 3-pin TO-247 through-hole configuration, it ensures stable mounting and enhanced heat dissipation.
The MOSFET achieves a maximum power dissipation of 330W and maintains operation over a wide temperature range between -40°C and 175°C, making it suitable for heavy industrial environments. Its low Rds(on) of 25mΩ minimizes conduction losses, contributing to energy efficiency.
Designed for applications including energy recovery systems, PDP sustain circuits, high-power motor drives, and switching power supplies within automation frameworks, this device enhances system reliability and performance. It is also well-suited for professional audio amplification where precise output handling is essential.
Thermally, it features a junction-to-case thermal resistance of 0.45°C/W, highlighting the need for adequate cooling solutions to maintain optimal operation. Its pulsed drain current rating of 130A further ensures adaptability to dynamic loads.
Operates at a maximum drain-source voltage of 200V with 65A continuous current capacity. Low on-resistance Rds(on) of 25mΩ for efficient conduction. 3-pin TO-247 package for robust through-hole mounting. Thermal resistance junction-to-case of 0.45°C/W requiring heat dissipation measures.
Rated for operation from -40°C to 175°C for industrial applicability. Typical gate charge of 70nC supports fast switching performance. Capable of handling pulsed currents up to 130A for transient conditions. Maximum power dissipation at 330W accommodates high thermal loads.
This Infineon MOSFET model IRFP4227PBF is ideal for industrial, automation, HVAC, power supply, and motor control applications. Explore EnvMart’s comprehensive range of electronic components to find compatible high-performance solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 65A.
It has a maximum drain-source voltage rating of 200V.
The typical gate charge for this unit is 70nC, which supports fast switching performance.
The low on-resistance Rds(on) of this model is 25mΩ, which helps reduce conduction losses.
This MOSFET operates within a temperature range of -40°C to 175°C.
It comes in a 3-pin TO-247 package with a through-hole mount type for robust installation.
The maximum power dissipation for this MOSFET is 330W, suitable for demanding environments.
The thermal resistance junction-to-case is 0.45°C/W, which requires proper heat dissipation measures.
It is capable of handling pulsed drain currents up to 130A, making it suitable for transient applications.
This model is suitable for applications including energy recovery systems, high-power motor drives, and switching power supplies.
The forward voltage for this device is 1.3V.
This model features an N-channel configuration, designed for enhancement mode operation.
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