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Infineon HEXFET Type P-Channel MOSFET 74A 55V Enhancement 3-Pin TO-262 IRF4905LPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 10.54mm |
| Length | 10.67mm |
| Model | IRF4905LPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-262 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 74A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.8W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.3V |
Key Features
- Designed for high efficiency and effective power management in electronic circuits.
- Supports operating temperatures from -55°C to +175°C for use in extreme environments.
- Low RDS(on) resistance reduces power losses and heat generation.
- Through-hole TO-262 package allows easy integration into standard PCB layouts.
- Fast switching and robust avalanche tolerance enhances reliability in industrial applications.
- Ideal for brushless DC motor control and automotive electronics systems.
- Maximum gate-source voltage tolerance of -20 to +20V ensures safe operation.
- Maximum power dissipation of 3.8W supports moderate power applications.
Product Description
Infineon IRF4905LPBF HEXFET Type P-Channel MOSFET is a high-performance semiconductor device designed for power management in industrial, automotive, and electronic sectors. Featuring a maximum continuous drain current of 74A and a maximum drain-source voltage of 55V, it provides reliable operation for various moderate to high voltage applications.
This MOSFET is housed in a robust 3-pin TO-262 through-hole package suitable for common PCB designs. It supports a wide operating temperature range from -55°C to +175°C, making it capable of functioning in challenging environments and temperatures.
With a low drain-source resistance RDS(on) of 20mΩ, the device minimizes conduction losses and heat dissipation, enhancing overall circuit efficiency. The device also benefits from fast switching capabilities, which improve response times and reduce energy consumption in switching circuits.
The IRF4905LPBF tolerates repetitive avalanche conditions without failure, enhancing durability and robustness in power electronics applications. Its typical gate charge of 180nC and gate-source voltage range of -20 to +20V ensure effective gate control and circuit responsiveness.
Applications include energy-efficient power management circuits, automotive electronics requiring high reliability, brushless DC motor control systems, and industrial automation setups requiring robust semiconductor components.
Designed for high efficiency and effective power management in electronic circuits. Supports operating temperatures from -55°C to +175°C for use in extreme environments. Low RDS(on) resistance reduces power losses and heat generation.
Through-hole TO-262 package allows easy integration into standard PCB layouts. Fast switching and robust avalanche tolerance enhances reliability in industrial applications. Ideal for brushless DC motor control and automotive electronics systems.
Maximum gate-source voltage tolerance of -20 to +20V ensures safe operation. Maximum power dissipation of 3.8W supports moderate power applications. Compact dimensions: 10.67mm length, 10.54mm height, and 4.83mm width. For reliable and efficient semiconductor solutions, explore more MOSFET products within the Infineon brand and our Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the IRF4905LPBF is 74A.
It can handle a maximum drain-source voltage of 55V.
This model supports an operating temperature range from -55°C to +175°C.
The RDS(on) resistance for this MOSFET is 20mΩ, which helps reduce power losses.
It is housed in a TO-262 through-hole package, suitable for standard PCB layouts.
The maximum power dissipation for the IRF4905LPBF is 3.8W.
The typical gate charge is 180nC at the specified gate-source voltage.
The maximum gate-source voltage tolerance is -20V to +20V.
The dimensions are 10.67mm in length, 10.54mm in height, and 4.83mm in width.
This model features a P-channel type configuration.
It is suitable for applications such as brushless DC motor control and automotive electronics systems.
The forward voltage for the IRF4905LPBF is -1.3V.
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