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onsemi PNP Power Transistor, Maximum DC Collector Current -8 A, Maximum Collector Emitter Voltage -150 V, 3-Pin MJE15031G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 30.02mm
Length 10.53mm
Model MJE15031G
Width 4.83mm
Mount Type Through Hole
Series MJE15031
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -150V
Minimum DC Current Gain hFE 20
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 150V
Maximum Power Dissipation Pd 50W
Maximum DC Collector Current Idc -8A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz
onsemi KSA940TU Transistor, 1.5 A PNP, 150 V, 3-Pin TO-220Brand onsemi

Key Features

  • This PNP transistor supports a maximum power dissipation of 50 W for reliable performance.
  • It features a through-hole mount type fitting standard PCB assembly techniques.
  • Minimum DC current gain (hFE) of 20 ensures strong amplification characteristics.
  • Operating temperature range spans from -65°C to 150°C suitable for industrial environments.
  • It has a maximum transition frequency of 30 MHz for efficient signal switching.
  • The transistor has 3 pins arranged in TO-220 package for easy integration.
  • Maximum voltages include collector-base 150 V and emitter-base 5 V for robust operation.

Product Description

onsemi MJE15031G is a PNP power transistor suitable for demanding electronic and power applications. Its maximum DC collector current rating of -8 A and collector-emitter voltage of -150 V provide reliable high current switching and amplification capabilities. Packaged in a TO-220 with 3 pins, it supports through-hole mounting compatible with traditional PCB designs.

The transistor supports a maximum power dissipation of 50 W allowing it to handle substantial power while maintaining stable operation. It has a low minimum DC current gain of 20 ensuring effective current amplification. The device operates in a wide temperature range from -65°C to 150°C making it suitable for rigorous industrial, automotive, and HVAC control environments.

With a maximum transition frequency of 30 MHz, it is capable of efficient high-speed switching. The transistor’s maximum collector-base voltage is 150 V and emitter-base voltage is 5 V, ensuring solid electrical endurance. Physical dimensions of 30.02mm height, 4.83mm width, and 10.53mm length give a compact footprint for power modules and discrete semiconductor circuits.

This component is supplied new by onsemi, adhering to stringent quality and manufacturing standards. It is ideal for industrial electronics, power supply design, signal processing, automated manufacturing systems, and related engineering applications.

This PNP transistor supports a maximum power dissipation of 50 W for reliable performance. It features a through-hole mount type fitting standard PCB assembly techniques. Minimum DC current gain (hFE) of 20 ensures strong amplification characteristics.

Operating temperature range spans from -65°C to 150°C suitable for industrial environments. It has a maximum transition frequency of 30 MHz for efficient signal switching. The transistor has 3 pins arranged in TO-220 package for easy integration.

Maximum voltages include collector-base 150 V and emitter-base 5 V for robust operation. Physical dimensions: height 30.02mm, width 4.83mm, length 10.53mm.

Explore the high-quality transistor inventory on EnvMart for industrial and commercial electronic component needs. Our catalog includes detailed specifications and technical datasheets for design engineers and procurement professionals.

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onsemi PNP Power Transistor, Maximum DC Collector Current -8 A, Maximum Collector Emitter Voltage -150 V, 3-Pin MJE15031G
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Frequently Asked Questions

The maximum DC collector current for this model is -8 A, allowing it to handle significant current levels in various applications.

This transistor has a maximum collector-emitter voltage rating of -150 V, which provides robust operational capabilities.

It supports a maximum power dissipation of 50 W, ensuring stable operation under substantial power loads.

The operating temperature range spans from -65°C to 150°C, making it suitable for industrial environments.

It has a maximum transition frequency of 30 MHz, enabling efficient high-speed signal switching.

The dimensions of this transistor are 30.02 mm in height, 4.83 mm in width, and 10.53 mm in length.

This model features a through-hole mount type, compatible with standard PCB assembly techniques.

The minimum DC current gain (hFE) is 20, which ensures effective current amplification in circuits.

It comes in a TO-220 package type, which is commonly used for power transistors.

The maximum emitter-base voltage (VEBO) for this transistor is 5 V, providing reliable operation in various applications.

It is ideal for industrial electronics, power supply design, signal processing, and automated manufacturing systems.

This model has a single transistor configuration, suitable for various electronic applications.

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