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Infineon N-Channel Power MOSFET 40V 381A 0.7mΩ Rds(on) SuperSO8 8-Pin Surface Mount BSC026N08NS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC026N08NS5ATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | +150°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Features a SuperSO8 5 x 6 mm package with 8 pins for surface mounting.
- Supports high continuous drain current of 381A suitable for heavy load conditions.
- Offers low maximum drain-source resistance of 0.7 milliohm to minimize power loss.
- Maximum power dissipation of 81W allowing sustained thermal performance.
- Typical gate charge of 80nC enables efficient switching.
- Operating temperature range from -55°C up to +150°C for versatile use.
- Maximum gate-source voltage rating of 20V ensures compatibility with standard drives.
- Meets RoHS environmental compliance standards.
Product Description
Infineon BSC026N08NS5ATMA1 is a high-performance N-Channel power MOSFET designed for demanding electronic applications requiring low conduction losses and high current capacity. This device features a compact SuperSO8 5 x 6 mm package with 8 pins optimized for surface mount technology.
Capable of handling a maximum drain-source voltage of 40V and a continuous drain current of 381A, it is well suited for high-current DC-DC converters, power racks, and heavy-load circuits.
The device achieves a low maximum drain-source resistance of 0.7 milliohm, which minimizes conduction losses, contributing to improved efficiency and reduced heat generation. With a maximum power dissipation rating of 81W, it supports sustained operation under substantial thermal loading conditions.
The typical gate charge is 80 nanocoulombs, allowing for rapid switching and efficient gate drive energy consumption. It operates reliably across a wide temperature range from -55°C to +150°C, suitable for industrial and commercial electronics applications.
This MOSFET complies with RoHS environmental restrictions but is not classified for automotive qualification programs. Its compact surface-mount form factor enables easy integration into high-density circuit designs.
SuperSO8 5 x 6 mm 8-pin surface mount package. High continuous drain current capability of 381A. Low conduction losses with 0.7mΩ maximum Rds(on). Supports 81W maximum power dissipation. 80nC typical gate charge for efficient switching.
Wide operating temperature range from -55°C to +150°C. 20V maximum gate-source voltage compatibility. Meets RoHS standards for environmental compliance.
This power MOSFET is ideal for industrial, telecommunications, server power modules, motor control drivers, battery management systems in high-power packs, and high-efficiency synchronous rectification circuits.
Explore more in our Electronics & Electricals category for reliable MOSFET devices from trusted brands like Infineon at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 381A, making it suitable for heavy load conditions.
This MOSFET has a maximum drain-source voltage rating of 40V.
It features a SuperSO8 package with dimensions of 5 x 6 mm and has 8 pins for surface mounting.
The maximum power dissipation is rated at 81W, allowing for sustained thermal performance under load.
The typical gate charge for this MOSFET is 80nC, which enables efficient switching operations.
It operates reliably within a temperature range from -55°C to +150°C.
The maximum gate-source voltage rating of this MOSFET is 20V, ensuring compatibility with standard drives.
This device meets RoHS environmental compliance standards, ensuring it adheres to restrictions on hazardous substances.
The maximum drain-source resistance (Rds(on)) is 0.7 milliohm, which minimizes conduction losses.
This MOSFET is suitable for applications such as high-current DC-DC converters, power racks, and motor control drivers.
This model features an N-channel configuration, which is commonly used for various electronic applications.
The country of origin for this MOSFET is India.
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