Infineon HEXFET N-Channel MOSFET, 36A, 100V, Enhancement Mode, 3-Pin TO-220 IRL540NPBF

Infineon IRL540NPBF HEXFET N-Channel MOSFET is a robust semiconductor device engineered for high-current and voltage applications demanding efficient switching performance. Rated for a maximum continuous drain current of 36 amperes and a maximum drain-source voltage of 100 volts, this enhancement-mode MOSFET ensures reliable operation in challenging environments typically encountered in industrial automation, robotics, renewable energy power supplies, and electronic consumer devices.

The device features a low drain-source resistance of 44 milliohms, which significantly reduces power losses and thermal stress during operation. Its power dissipation capability of 140 watts enables it to handle substantial power loads effectively. With a thermal operating range from -55°C to 175°C, it offers versatility in varied temperature conditions, including harsh environments.

The IRL540NPBF is packaged in a 3-pin TO-220 through-hole module facilitating straightforward integration onto printed circuit boards while offering effective heat dissipation. The typical gate charge of 74 nanocoulombs assures swift switching, integral for high-frequency applications. The forward voltage of 1.3 volts contributes to efficient conduction and reduced heat generation, extending device longevity.

Industries leveraging this MOSFET include industrial power management systems, electric motor controls in automation and robotics, DC-DC converters utilized in renewable energy systems, and power supplies where efficient energy transfer is critical. Its reliable switching and high current handling capabilities make it indispensable in technical and commercial electronic component inventories.

Supports a maximum continuous drain current of 36 amperes for demanding electrical circuits. Features a maximum drain-source voltage rating of 100 volts suitable for industrial and automation use. Enhancement mode operation provides improved switching efficiency and control.

Low on-resistance of 44 milliohms minimizes power loss during conduction. Rated for maximum power dissipation of 140 watts, supporting high-performance scenarios. Operates reliably across a temperature range from -55°C up to 175°C for use in extreme conditions.

Designed with a 3-pin TO-220 through-hole package for secure mounting and heat dissipation. Typical gate charge of 74 nanocoulombs allows for fast switching response. Forward voltage drop of 1.3 V ensures efficient conduction with low heat generation.

Suitable for applications including industrial power management, motor control, DC-DC converters, and consumer electronics power distribution.

Choose Infineon components for advanced performance and durability in critical semiconductor applications. Explore more in the discrete semiconductors category at EnvMart for comprehensive power device selections.