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Infineon HEXFET Type P-Channel MOSFET 31A 55V Enhancement 3-Pin TO-220 IRF5305PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF5305PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.3V |
| P-channel MOSFET,IRF5305 31A 55VBrand | International Rectifier |
Key Features
- This MOSFET features a TO-220AB package ensuring efficient thermal management.
- It offers a low on-resistance of 60mΩ for reduced power loss during operation.
- The device supports a maximum power dissipation of 110W for demanding industrial applications.
- Operating temperature range from -55°C up to 175°C makes it suitable for harsh environments.
- Gate-source voltage tolerance of ±20V allows flexible control signal interfacing.
- Typical gate charge of 63nC supports fast switching performance to enhance system efficiency.
- It is designed for through-hole mounting compatible with automated assembly processes.
- Common applications include motor control systems, power supplies, and renewable energy systems.
Product Description
Infineon IRF5305PBF is a HEXFET Type P-Channel MOSFET designed for high-efficiency power switching applications. It operates at a continuous drain current of 31A and a maximum drain-source voltage of 55V, providing robust performance in industrial, automation, and electronic device systems.
The MOSFET’s enhancement mode operation and low on-resistance of 60mΩ minimize power losses and heat generation. Packaged in a TO-220AB case, it offers enhanced thermal dissipation, suitable for high power and high temperature environments with an operating range from -55°C to 175°C.
With a maximum power dissipation of 110W and a typical gate charge of 63nC at Vgs, this MOSFET supports rapid switching, boosting overall system efficiency and responsiveness. Its gate-source voltage rating of ±20V permits diverse drive voltages, ensuring compatibility with various control electronics.
The through-hole TO-220AB package supports automated assembly, making it ideal for manufacturing processes.
Applications for the IRF5305PBF include motor control circuits, power supply regulation, electronic switching devices, and renewable energy control systems where efficiency and reliability are critical.
This P-channel MOSFET is optimized for high-efficiency power management. The TO-220AB package ensures low thermal resistance and better cooling. It supports pulsed drain currents up to 110A for transient demand handling.
Through-hole mount design allows use in automated PCB assembly. Reliable operation in extreme temperature conditions from -55°C to 175°C.
EnvMart offers this component suited for technical professionals and industrial applications requiring powerful and efficient MOSFETs. Explore more Infineon semiconductor products in our Electronics & Electricals category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 31A.
It supports a maximum drain-source voltage of 55V.
The typical gate charge at Vgs is 63nC, which supports fast switching performance.
The operating temperature range is from -55°C to 175°C, making it suitable for harsh environments.
This model has a maximum power dissipation of 110W.
It is packaged in a TO-220AB case, which ensures efficient thermal management.
The dimensions are 10.54mm in length, 4.69mm in width, and 8.77mm in height.
The on-resistance is 60mΩ, which helps in reducing power loss during operation.
This model supports through-hole mounting, compatible with automated assembly processes.
The gate-source voltage tolerance is ±20V, allowing for flexible control signal interfacing.
Common applications include motor control systems, power supplies, and renewable energy systems.
It belongs to the HEXFET series, designed for high-efficiency power switching applications.
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