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Infineon HEXFET N-Channel MOSFET 57 A 100 V Enhancement Mode 3-Pin TO-247 IRFP3710PBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 20.3mm
Length 15.9mm
Model IRFP3710PBF
Width 5.3mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 57A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 25mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 200W
Typical Gate Charge Qg @ Vgs 190nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V
N-channel MOSFET,IRFP3710 57A 100VBrand International Rectifier

Key Features

  • This MOSFET operates in enhancement mode with low on-resistance of 25 milliohms to reduce power loss.
  • It supports a maximum power dissipation of 200W suitable for industrial and automotive applications.
  • The device has a gate voltage tolerance between -20V and +20V and a typical gate charge of 190nC.
  • Operating temperature ranges from -55°C up to 175°C for reliable high-temperature performance.
  • The TO-247AC through-hole package enables easy mounting and integration in various circuits.
  • Ideal for power supply circuits, motor control systems, battery management, and automotive power management.
  • Has a forward voltage rating of 1.3V supporting efficient switching applications.

Product Description

Infineon IRFP3710PBF HEXFET N-Channel MOSFET offers excellent power handling capabilities with a continuous drain current of 57A and a maximum drain-source voltage of 100V, housed in a durable 3-Pin TO-247 package suitable for through-hole mounting.

This device operates in enhancement mode and features a low drain-source resistance (Rds(on)) of 25 milliohms, minimizing conduction losses and enhancing energy efficiency. Its power dissipation capacity of 200W allows it to sustain heavy loads, critical for demanding industrial and automotive environments.

The MOSFET functions reliably over a broad temperature range from -55°C to 175°C, accommodating harsh operating conditions. The typical gate charge of 190nC and gate voltage range of -20V to +20V ensures compatibility with standard gate drive circuits.

This MOSFET is commonly used in power supply regulation, motor speed control, battery management systems, and automotive power management solutions, making it a versatile component in electronic designs.

This model's low Rds(on) value significantly reduces energy loss during switching operations. Its TO-247AC package provides mechanical robustness and ease of installation through through-hole technology. The device's maximum power dissipation of 200W supports heavy current loads efficiently.

Wide operating temperature range ensures dependable performance in industrial and automotive applications. Designed for high continuous drain current to meet the needs of power-demanding systems. Compatible with typical gate voltages facilitating integration in diverse circuit designs.

Infineon's quality and reputation make the IRFP3710PBF a reliable choice for electronic components, power management, and semiconductor applications. Explore a wide range of MOSFETs and discrete semiconductors in EnvMart's Electronics & Electricals category for your industrial and commercial needs.

Infineon HEXFET N-Channel MOSFET 57 A 100 V Enhancement Mode 3-Pin TO-247 IRFP3710PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 57A.

It has a maximum drain-source voltage rating of 100V.

The IRFP3710PBF supports a maximum power dissipation of 200W.

The operating temperature range for the IRFP3710PBF is from -55°C to 175°C.

This MOSFET features a low drain-source resistance (Rds(on)) of 25 milliohms.

The typical gate charge for this model is 190nC.

It has a maximum gate-source voltage tolerance of -20V to +20V.

The IRFP3710PBF is housed in a TO-247 package type suitable for through-hole mounting.

The dimensions of this model are 20.3mm in height, 15.9mm in length, and 5.3mm in width.

This MOSFET is commonly used in power supply regulation, motor speed control, battery management systems, and automotive power management solutions.

The channel type of this MOSFET is N-channel.

The forward voltage rating for the IRFP3710PBF is 1.3V.

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