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Infineon HEXFET N-Channel MOSFET 87A 100V Enhancement Mode 3-Pin TO-220AB IRFZ24NPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 8.77mm
Length 10.54mm
Model IRFZ24NPBF
Width 4.69mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220AB
Minimum Operating Temperature -55°C
Standards/Approvals JEDEC TO-220AB
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 87A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 0.009Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 200W
Typical Gate Charge Qg @ Vgs 71nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V
N-channel MOSFET,IRFZ24N 17A 55VBrand International Rectifier

Key Features

  • Features enhancement mode operation for improved circuit control.
  • Supports maximum continuous drain current of 87A for high power management.
  • Maximum drain-source voltage of 100V ensures reliable operation in demanding applications.
  • Low Rds(on) of 0.009 ohms minimizes power loss and enhances efficiency.
  • High power dissipation capability of 200W for thermal robustness.
  • Operates in temperature range from -55°C to +175°C for versatile environments.
  • Through-hole mounting TO-220AB package offers easy integration and superior heat dissipation.
  • Typical gate charge of 71nC enables fast switching performance.

Product Description

Infineon IRFZ24NPBF HEXFET N-Channel MOSFET is designed for high current and voltage electronic applications, providing reliable switching and power management capabilities in industrial, automotive, and HVAC systems.

This MOSFET supports a continuous drain current of 87A and a maximum drain-source voltage of 100V, making it suitable for high-performance power control circuits. Its enhancement mode operation allows precise control of the channel conductivity, optimizing system efficiency.

The device features a low on-resistance (Rds(on)) of 0.009 ohms, minimizing conduction losses and heat generation under load. The robust power dissipation rating of 200W, combined with its TO-220AB through-hole package, facilitates effective thermal management, extending operational reliability.

Designed for harsh environments, the MOSFET can operate over a wide temperature range from -55°C up to +175°C. This tolerance makes it ideal for use in automotive electronics, power management systems, motor controls, and renewable energy applications.

The standard 3-pin TO-220AB package ensures easy integration into printed circuit boards with conventional layouts. Its compact size (10.54 mm length, 4.69 mm width, 8.77 mm height) allows for space-efficient designs.

Features enhancement mode operation for improved circuit control. Supports maximum continuous drain current of 87A for high power management. Maximum drain-source voltage of 100V ensures reliable operation in demanding applications.

Low Rds(on) of 0.009 ohms minimizes power loss and enhances efficiency. High power dissipation capability of 200W for thermal robustness. Operates in temperature range from -55°C to +175°C for versatile environments. Through-hole mounting TO-220AB package offers easy integration and superior heat dissipation.

Typical gate charge of 71nC enables fast switching performance. Maximum gate-source voltage rating of ±20V protects gate integrity. Compact dimensions suitable for PCB designs: length 10.54mm, width 4.69mm, height 8.77mm.

This MOSFET is commonly employed in industrial automation, automotive electronics, HVAC systems, motor controls, and renewable energy installations requiring high reliability and efficiency. Its design ensures consistent performance under varied operating conditions and durability for long service life.

Explore the Infineon MOSFET category on EnvMart for compatible components and related products to optimize your electronic system implementations.

Infineon HEXFET N-Channel MOSFET 87A 100V Enhancement Mode 3-Pin TO-220AB IRFZ24NPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 87A, making it suitable for high power management applications.

This MOSFET has a maximum drain-source voltage rating of 100V, ensuring reliable operation in demanding applications.

The on-resistance (Rds(on)) of this unit is 0.009 ohms, which helps minimize power loss and enhances efficiency during operation.

It has a high power dissipation capability of 200W, which contributes to its thermal robustness.

This model operates within a temperature range of -55°C to +175°C, making it versatile for various environments.

The device is packaged in a TO-220AB through-hole mount, which facilitates easy integration and superior heat dissipation.

The typical gate charge for this model is 71nC, enabling fast switching performance.

The dimensions of this model are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.

The maximum gate-source voltage rating for this MOSFET is ±20V, which protects gate integrity during operation.

This model is commonly employed in industrial automation, automotive electronics, HVAC systems, motor controls, and renewable energy applications.

This unit complies with JEDEC TO-220AB standards, ensuring compatibility with industry specifications.

This device features an N-channel configuration, which is typical for enhancement mode operation in power management applications.

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