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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP150NPBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 36mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRFP150N 42A 100VBrand | International Rectifier |
Infineon IRFP150NPBF is a HEXFET series N-Channel MOSFET designed for demanding power switching applications requiring high continuous drain current of 42 amperes and a voltage rating of 100 volts. Encapsulated in a TO-247 through-hole package, it offers ease of mounting with superior thermal conductivity.
This device features a low drain-source on-resistance (Rds(on)) of 36 milli-ohms, which minimizes conduction losses and improves overall system efficiency. The enhancement mode channel type ensures reliable switching performance for power electronics.
The MOSFET supports a maximum power dissipation rating of 160 watts, allowing it to operate under considerable thermal stress when adequately cooled. It operates efficiently over a broad temperature range from -55°C to +175°C, making it suitable for industrial, automotive, and renewable energy applications that require stability under harsh conditions.
With a typical gate charge of 110 nanocoulombs and a maximum gate-source voltage of ±20 volts, IRFP150NPBF supports high frequency switching with controlled gate drive requirements. Its forward voltage drop of approximately 1.3 volts reduces loss during conduction phases.
42A maximum continuous drain current for robust power handling. 100V drain-source voltage rating for versatility in medium voltage circuits. Low 36mΩ Rds(on) for reduced thermal losses. 160W maximum power dissipation supports high-performance applications.
3-pin TO-247 package suits through-hole mounting with effective heat sinking. Wide operating temperature range ensures reliability in demanding environments. Enhancement type N-channel MOSFET for efficient switching.
This MOSFET is widely used in industrial automation power supplies, motor control systems, renewable energy converters, telecommunication switching, and other power electronic circuits requiring efficient, high-speed switching with thermal stability.
Choose the Infineon IRFP150NPBF for a durable, high-performance power MOSFET solution in your electronic designs. Browse more Semiconductors and MOSFET products at EnvMart for all your professional industrial needs.
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