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Infineon HEXFET N-Channel MOSFET, 42A Continuous Drain Current, 100V Drain-Source Voltage, TO-247 Package IRFP150NPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 20.3mm
Length 15.9mm
Model IRFP150NPBF
Width 5.3mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 42A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 36mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 160W
Typical Gate Charge Qg @ Vgs 110nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V
N-channel MOSFET,IRFP150N 42A 100VBrand International Rectifier

Key Features

  • Maximum continuous drain current of 42A ensures high power handling capability.
  • Drain-source voltage rating of 100V suitable for medium voltage applications.
  • Low on-resistance of 36mΩ minimizes power loss and improves efficiency.
  • Maximum power dissipation of 160W enables operation under high thermal loads.
  • Enhancement mode N-channel MOSFET for reliable switching performance.
  • 3-pin TO-247 through-hole package allows easy mounting and efficient heat dissipation.
  • Wide operating temperature range from -55°C to 175°C for harsh environments.
  • Typical gate charge of 110nC supports fast switching speeds.

Product Description

Infineon IRFP150NPBF is a HEXFET series N-Channel MOSFET designed for demanding power switching applications requiring high continuous drain current of 42 amperes and a voltage rating of 100 volts. Encapsulated in a TO-247 through-hole package, it offers ease of mounting with superior thermal conductivity.

This device features a low drain-source on-resistance (Rds(on)) of 36 milli-ohms, which minimizes conduction losses and improves overall system efficiency. The enhancement mode channel type ensures reliable switching performance for power electronics.

The MOSFET supports a maximum power dissipation rating of 160 watts, allowing it to operate under considerable thermal stress when adequately cooled. It operates efficiently over a broad temperature range from -55°C to +175°C, making it suitable for industrial, automotive, and renewable energy applications that require stability under harsh conditions.

With a typical gate charge of 110 nanocoulombs and a maximum gate-source voltage of ±20 volts, IRFP150NPBF supports high frequency switching with controlled gate drive requirements. Its forward voltage drop of approximately 1.3 volts reduces loss during conduction phases.

42A maximum continuous drain current for robust power handling. 100V drain-source voltage rating for versatility in medium voltage circuits. Low 36mΩ Rds(on) for reduced thermal losses. 160W maximum power dissipation supports high-performance applications.

3-pin TO-247 package suits through-hole mounting with effective heat sinking. Wide operating temperature range ensures reliability in demanding environments. Enhancement type N-channel MOSFET for efficient switching.

This MOSFET is widely used in industrial automation power supplies, motor control systems, renewable energy converters, telecommunication switching, and other power electronic circuits requiring efficient, high-speed switching with thermal stability.

Choose the Infineon IRFP150NPBF for a durable, high-performance power MOSFET solution in your electronic designs. Browse more Semiconductors and MOSFET products at EnvMart for all your professional industrial needs.

Infineon HEXFET N-Channel MOSFET, 42A Continuous Drain Current, 100V Drain-Source Voltage, TO-247 Package IRFP150NPBF
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Frequently Asked Questions

The maximum continuous drain current for the Infineon IRFP150NPBF is 42A.

It has a drain-source voltage rating of 100V, making it suitable for medium voltage applications.

This model is encapsulated in a TO-247 through-hole package, which facilitates easy mounting and effective heat dissipation.

The maximum power dissipation rating is 160W, allowing it to operate under considerable thermal stress when adequately cooled.

The typical gate charge is 110nC, supporting fast switching speeds.

It operates efficiently over a wide temperature range from -55°C to +175°C, suitable for harsh environments.

The on-resistance (Rds(on)) is 36mΩ, which minimizes conduction losses and improves overall efficiency.

It features an enhancement mode N-channel, which ensures reliable switching performance for power electronics.

The forward voltage drop is approximately 1.3V, which reduces loss during conduction phases.

The TO-247 package has 3 pins.

This MOSFET is suitable for applications in industrial automation power supplies, motor control systems, and renewable energy converters.

The maximum gate-source voltage is ±20 volts.

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