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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.67mm |
| Model | IRL3705NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 89A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 10mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 98nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRL3705N 77A 55VBrand | International Rectifier |
Infineon IRL3705NPBF HEXFET N-Channel MOSFET is designed for high-performance industrial and automation applications, delivering a continuous drain current of 89 amps and a maximum drain-source voltage of 55 volts. Packaged in a TO-220 through-hole format with three pins, it provides enhanced efficiency through a low on-resistance of 10 milliohms, while maintaining reliability with a maximum power dissipation of 170 watts.
This device features an enhancement mode channel for innovative circuit designs and fast switching capabilities that significantly improve system responsiveness. Its robust construction supports operation across a broad temperature range from -55°C up to 175°C, making it suitable for demanding electrical environments.
The maximum gate-source voltage is rated at ±16 volts to protect against overvoltage damage, and the typical gate charge of 98 nanocoulombs enables precise gate control for efficient switching. The forward voltage of 1.3 volts ensures effective conduction under load conditions.
Ideal for use in industrial power management systems, motor control drives, automation equipment, and DC-DC converters, this MOSFET supports applications requiring low thermal resistance and high reliability.
Low on-resistance of 10 milliohms enhances efficiency. Enhancement mode operation supports advanced circuit designs. Fast switching capability improves system responsiveness. Handles maximum power dissipation of 170 watts for thermal robustness.
Wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments. Three-pin through-hole mounting facilitates easy PCB assembly. Maximum gate-source voltage rating of ±16 volts protects the device.
Typical gate charge of 98 nanocoulombs allows precise gate control. Forward voltage of 1.3 volts supports effective conduction. Suitable for industrial power management, motor drives, and DC-DC converter applications. Explore additional Infineon semiconductor components and HEXFET power MOSFETs on EnvMart for reliable electronic and industrial applications.
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