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Infineon HEXFET N-Channel MOSFET, 89 A, 55 V Enhancement Mode, 3-Pin TO-220 Package IRL3705NPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.02mm
Length 10.67mm
Model IRL3705NPBF
Width 4.69mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 89A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 10mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 170W
Typical Gate Charge Qg @ Vgs 98nC
Maximum Gate Source Voltage Vgs -16, +16V
Forward Voltage Vf 1.3V
N-channel MOSFET,IRL3705N 77A 55VBrand International Rectifier

Key Features

  • Low on-resistance of 10 milliohms enhances efficiency.
  • Enhancement mode operation supports advanced circuit designs.
  • Fast switching capability improves system responsiveness.
  • Handles maximum power dissipation of 170 watts for thermal robustness.
  • Wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
  • Three-pin through-hole mounting facilitates easy PCB assembly.
  • Maximum gate-source voltage rating of ±16 volts protects the device.
  • Typical gate charge of 98 nanocoulombs allows precise gate control.

Product Description

Infineon IRL3705NPBF HEXFET N-Channel MOSFET is designed for high-performance industrial and automation applications, delivering a continuous drain current of 89 amps and a maximum drain-source voltage of 55 volts. Packaged in a TO-220 through-hole format with three pins, it provides enhanced efficiency through a low on-resistance of 10 milliohms, while maintaining reliability with a maximum power dissipation of 170 watts.

This device features an enhancement mode channel for innovative circuit designs and fast switching capabilities that significantly improve system responsiveness. Its robust construction supports operation across a broad temperature range from -55°C up to 175°C, making it suitable for demanding electrical environments.

The maximum gate-source voltage is rated at ±16 volts to protect against overvoltage damage, and the typical gate charge of 98 nanocoulombs enables precise gate control for efficient switching. The forward voltage of 1.3 volts ensures effective conduction under load conditions.

Ideal for use in industrial power management systems, motor control drives, automation equipment, and DC-DC converters, this MOSFET supports applications requiring low thermal resistance and high reliability.

Low on-resistance of 10 milliohms enhances efficiency. Enhancement mode operation supports advanced circuit designs. Fast switching capability improves system responsiveness. Handles maximum power dissipation of 170 watts for thermal robustness.

Wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments. Three-pin through-hole mounting facilitates easy PCB assembly. Maximum gate-source voltage rating of ±16 volts protects the device.

Typical gate charge of 98 nanocoulombs allows precise gate control. Forward voltage of 1.3 volts supports effective conduction. Suitable for industrial power management, motor drives, and DC-DC converter applications. Explore additional Infineon semiconductor components and HEXFET power MOSFETs on EnvMart for reliable electronic and industrial applications.

Infineon HEXFET N-Channel MOSFET, 89 A, 55 V Enhancement Mode, 3-Pin TO-220 Package IRL3705NPBF
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Frequently Asked Questions

The maximum continuous drain current for the IRL3705NPBF is 89 amps.

This model has a maximum drain-source voltage rating of 55 volts.

The on-resistance of the IRL3705NPBF is 10 milliohms, which enhances its efficiency.

It can handle a maximum power dissipation of 170 watts.

The operating temperature range for the IRL3705NPBF is from -55°C to 175°C.

This model features a through-hole mounting type with three pins.

The typical gate charge for the IRL3705NPBF is 98 nanocoulombs.

The maximum gate-source voltage rating is ±16 volts.

The forward voltage of the IRL3705NPBF is 1.3 volts.

This MOSFET is suitable for industrial power management systems, motor control drives, automation equipment, and DC-DC converters.

The package type of the IRL3705NPBF is TO-220.

The IRL3705NPBF utilizes an N-channel type.

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